Allicdata Part #: | NTD3055L170-001OS-ND |
Manufacturer Part#: |
NTD3055L170-001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 9A IPAK |
More Detail: | N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Throug... |
DataSheet: | NTD3055L170-001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 4.5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 28.5W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The NTD3055L170-001 is a single-channel insulated gate bipolar transistor (IGBT) used extensively in motor control, uninterruptible power supply, converters, control and voltage regulation, and similar power management applications. This device is designed for use in demanding industrial and automotive applications where power and efficiency are key factors. It features low on-state resistance to ensure improved circuit efficiency and superior switching performance.
The NTD3055L170-001 is essentially a combination of an insulated-gate field effect transistor (IGFET) and a bipolar junction transistor (BJT). It is essentially a voltage-controlled device that works by shifting the conducting channel between the drain and the source terminals. The controlling electrode, or gate,is insulated from the channel by a thin layer of insulating material, or gate dielectric material. This allows the gate to be charged with a certain voltage, though not to exceed the breakdown potential of the gate dielectric. When the gate voltage reaches a certain voltage point, called the threshold voltage, free carriers are injected into the channel, creating an inversion layer.
The source and drain terminals serve as source and drain electrodes, respectively, and current flows through the drain-source region when a gate voltage is applied. In the NTD3055L170-001 IGBT, the source and drain electrodes are connected to the substrate by thick metal bonds, providing superior switching efficiency. Additionally, the gate-source dielectric presents a much higher breakdown voltage than the typical gate-drain dielectric, providing the NTD3055L170-001 with the capability of handling power transients.
The NTD3055L170-001, being a single channel IGBT, is a versatile and cost-effective solution for power management applications requiring higher switching frequency and improved safety. It is ideal for applications such as traction inverters, brushless DC motor drives, UPS systems, and solar power inverters. Additionally, its superior performance characteristics make it ideal for other applications such as switched-mode power supplies, battery charging, and welding power supplies.
The NTD3055L170-001 IGBT is a reliable component that is capable of handling large amounts of power. The device is designed for use in harsh environments and is capable of switching repeatedly and continuously with minimal loss of efficiency. It is easy to use, provides good voltage protection and thermal performance, and is also easy to package in applications that require a low component count. Furthermore, its robust design allows it to withstand high levels of sustained power and surges, making it an ideal component for a wide range of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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