NTD32N06T4G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	26 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1725pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1.5W (Ta), 93.75W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Introduction

The NTD32N06T4G is a type of a single-circuit field-effect transistor (FET). This FET is often referred to as an “enhancement mode” device, meaning it is a non-inverting type of device. It has one transistor which is controlled by a gate voltage that allows current to flow in certain directions through the device itself. The use of this type of transistor is often preferred in applications that require more precise control than a normally “open” or “closed” type of configuration.

Applications and Working Principle

The NTD32N06T4G is typically used where high power and very low resistance is required. It is the most commonly used FETs in switching applications, because of its low-frequency cut off and high-speed switching capability. Typical applications include digital audio and video switching circuits, as well as transmitter and receiver digital logic circuits.The NTD32N06T4G both operates and requires voltage to control its gate signal. Its gate signal is also referred to as a “polarity-moving field”, as this type of field either increases or decreases depending on the level of the applied voltages. Depending on the magnitude of the applied voltages, the NTD32N06T4G will either block current flow or allow it to flow through the device, at varying levels depending on the applied voltage. The maximum power handling capability of this device is approximately 4 Watts.

Advantages

One of the primary advantages that the NTD32N06T4G offers is its excellent switching properties. It offers a high-speed switching response due to its low-frequency cut off. Additionally, since it requires a gate voltage for operation, users can control the polarity (positive or negative) of the voltage that is applied to the gate, allowing for further control of the current flow.The NTD32N06T4G also provides excellent noise suppression due to its high power handling capability and low on-resistance characteristics. This makes it ideal for applications such as digital audio and video circuits, as it helps to eliminate noise and interference. Furthermore, the NTD32N06T4G is also able to handle high voltages without compromising performance, making it a great choice for uses such as battery-operated circuits and telecommunication systems.

Conclusion

The NTD32N06T4G is a single-circuit FET used for high power and low on-resistance applications. It has many advantages, such as excellent switching properties, noise suppression, high-power handling capabilities and ability to handle high voltages well. Due to its reliable performance, small size and relatively low cost, the NTD32N06T4G is often the preferred choice for applications such as digital audio and video switching circuits, transmitters, receivers and other battery-operated circuits.

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