Allicdata Part #: | NTD3055L170G-ND |
Manufacturer Part#: |
NTD3055L170G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 9A DPAK |
More Detail: | N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surfac... |
DataSheet: | NTD3055L170G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 4.5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 28.5W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NTD3055L170G is a N-channel MOSFET commonly used in advanced applications. It is a part of the KEMET family of MOSFETs and provides a low on resistance of 170 mOhm at 4.5V gate, drain and source voltages. This makes it an ideal device for applications where low power losses and high efficiency are desired.
The application field of the NTD3055L170G is quite versatile, since it can be used in many different types of electronic circuits. It can be used in power supplies, motor control, audio amplifiers, analog signal processing, switching converters and other similar applications. It’s an especially useful part for designing high power circuits since it can dissipate up to 8W of check power and has a drain-source voltage rating of 30V (ID = 5.0A). Moreover, it has a lead temperature of up to 150°C, which allows it to be used in high-temperature environments.
The NTD3055L170G also features a high number of package options, such as LLP, D-PAK, SOT-223 and TO-252, meaning that it can be used in a variety of different circuit boards. It is also pin compatible with other members of the KEMET family.
The working principle of the NTD3055L170G is quite simple. It is an N-channel MOSFET, meaning that when there is a positive voltage applied to it’s gate, it will allow conduction between the drain and the source. This effectively allows it to act as a switch, with the voltage at the gate determining how much current will be allowed to pass through the device.
When the gate is held at 0V (or \'Off\'), the NTD3055L170G will not allow currents to flow between the drain and the source. This effectively prevents any current from passing through the device, and since it has a very low on resistance of 170 mOhm it can be used to minimize power losses in the circuit.
The NTD3055L170G also features a low gate charge, meaning that it requires less energy to switch on and off. This makes it especially useful for applications that require fast switching, such as motor control and power supplies. Moreover, it has a high input capacitance, providing reliable protection against voltage spikes.
Overall, the NTD3055L170G is a versatile MOSFET that can be used in a wide variety of applications. Its low on resistance and high voltage rating make it an ideal device for high-power circuits, while its fast switching and high input capacitance make it a great choice for applications that require fast switching. It is available in several different packages, making it suitable for almost any type of circuit board.
The specific data is subject to PDF, and the above content is for reference
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