NTD3808N-35G

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NTD3808N-35G is an enhancement-mode vertical N-Channel MOSFET (Metal Oxide Semiconductor Field effect transistor) that can be used in a variety of applications, including motor drive circuits, piezoelectric and acoustic transducers, and switching circuits. The NTD3808N-35G can be used in a wide range of applications, from low power to high power and from low frequency to high frequency.

The NTD3808N-35G is an excellent choice for engineers and designers looking for a transistor with fast switching characteristics, low on-resistance, robustness and performance. It is a small-signal device that is optimized for low noise, low power consumption and low input/output impedance. The NTD3808N-35G offers excellent electrical performance and is able to operate at high frequencies.

The NTD3808N-35G has a maximum drain current of 2.5A, a maximum drain-source saturation voltage of 0.7V, a maximum drain-source on-state resistance of 0.2Ω, and a maximum gate-source voltage of 15V. It has a threshold voltage of 0.85V and a maximum junction temperature of 175°C. The NTD3808N-35G is designed to operate in the range of -55°C to 175°C.

The working principle of the NTD3808N-35G is based on a voltage-controlled current-surviving mechanism. It is a three-terminal device wherein a small electrical signal applied to the gate can control the amount of current that flows between the source and the drain. The gate terminal acts as a voltage input and the source and drain terminals act as current outputs.

The output of the NTD3808N-35G is a function of the gate-source voltage, which acts as a control voltage for the device. For example, if the gate-source voltage is higher than the threshold voltage, the drain current will start to flow and the drain-source voltage will drop as the drain current increases. On the other hand, if the gate-source voltage is lower than the threshold voltage, no current will flow and the drain-source voltage will remain high.

The NTD3808N-35G is an enhancement mode MOSFET. This means that it can be used to switch between two distinct voltage levels. When the gate-source voltage is higher than the threshold voltage, the NTD3808N-35G will be conducting and it will allow current to flow from the source to the drain. When the gate-source voltage is lower than the threshold voltage, the NTD3808N-35G will be non-conducting and it will block any current from flowing between the source and the drain.

The NTD3808N-35G is ideal for use in a variety of applications including motor drive circuits, piezoelectric and acoustic transducers, and switching circuits. It is a fast switching device with low on-resistance, robustness and performance. It is suitable for operating in a wide range of temperatures and offers good electrical performance at high frequencies. It is an ideal choice for engineers and designers looking for a transistor with low power consumption and low input/output impedance.

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