NTD3055L104 Discrete Semiconductor Products |
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Allicdata Part #: | NTD3055L104-ND |
Manufacturer Part#: |
NTD3055L104 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 12A DPAK |
More Detail: | N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface... |
DataSheet: | NTD3055L104 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 48W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 104 mOhm @ 6A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD3055L104 is a dual N-channel enhancement mode Field Effect Transistor (FET), manufactured using an advanced high voltage CMOS process. The device has a monolithic construct, designed to minimize on-state resistance and provide superior performance across a broad range of applications.
The NTD3055L104 is mostly used in applications that require high operating gate voltage, such as LED lighting and DC-DC converters, as well as motion control and battery management. It is especially beneficial for applications that require low on-state resistance, since its superior switching speed makes it suitable for a wide range of requirements. It is also designed with special tolerance to process ambient temperature fluctuations and to reduce susceptibility to ESD damage.
The working principle of a FET relies on the movement of an electric field over a semiconductor. In a FET, the electric field is created by applying a voltage between the source and the drain. This voltage causes a change in the concentration of charge carriers in the semiconductor, which in turn creates a current flow between the source and the drain. By varying the voltage between the source and the drain, the charge carriers can be manipulated, thus allowing for the control of a current in the device.
The NTD3055L104 operates in the enhancement mode, meaning that an increase in the voltage between the source and the gate will cause an increase in the current between the source and the drain. This is called VGS(on). It should be noted that the NTD3055L104 is capable of operating over a wide range of gate voltage, allowing for a wider range of applications.
The NTD3055L104 is an ideal choice for power MOSFET applications that require an increased gate voltage and low on-state resistance. Its monolithic construction, wide range of operating voltage, and temperature tolerance make it suitable for a number of environments and applications, including LED lighting and DC-DC converters, motion control, and battery management.
The specific data is subject to PDF, and the above content is for reference
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