NTD3055L104 Allicdata Electronics

NTD3055L104 Discrete Semiconductor Products

Allicdata Part #:

NTD3055L104-ND

Manufacturer Part#:

NTD3055L104

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 12A DPAK
More Detail: N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface...
DataSheet: NTD3055L104 datasheetNTD3055L104 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD3055L104 is a dual N-channel enhancement mode Field Effect Transistor (FET), manufactured using an advanced high voltage CMOS process. The device has a monolithic construct, designed to minimize on-state resistance and provide superior performance across a broad range of applications.

The NTD3055L104 is mostly used in applications that require high operating gate voltage, such as LED lighting and DC-DC converters, as well as motion control and battery management. It is especially beneficial for applications that require low on-state resistance, since its superior switching speed makes it suitable for a wide range of requirements. It is also designed with special tolerance to process ambient temperature fluctuations and to reduce susceptibility to ESD damage.

The working principle of a FET relies on the movement of an electric field over a semiconductor. In a FET, the electric field is created by applying a voltage between the source and the drain. This voltage causes a change in the concentration of charge carriers in the semiconductor, which in turn creates a current flow between the source and the drain. By varying the voltage between the source and the drain, the charge carriers can be manipulated, thus allowing for the control of a current in the device.

The NTD3055L104 operates in the enhancement mode, meaning that an increase in the voltage between the source and the gate will cause an increase in the current between the source and the drain. This is called VGS(on). It should be noted that the NTD3055L104 is capable of operating over a wide range of gate voltage, allowing for a wider range of applications.

The NTD3055L104 is an ideal choice for power MOSFET applications that require an increased gate voltage and low on-state resistance. Its monolithic construction, wide range of operating voltage, and temperature tolerance make it suitable for a number of environments and applications, including LED lighting and DC-DC converters, motion control, and battery management.

The specific data is subject to PDF, and the above content is for reference

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