NTD30N02G

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NTD30N02G is a 30 Amp N-Channel Enhancement Mode Field Effect Transistor (FET). It was designed specifically to enhance the signal transmission and current carrying capability of a wide range of low-to-moderate power switching applications. It is an enhancement-mode FET, which means it is normally off and requires a positive voltage on the gate in order for the FET to turn on. This makes it an ideal solution for low-to-moderate power switching, such as in automotive and industrial control applications, where high-side and low-side switching is required.

The NTD30N02G is constructed of a rugged N-channel silicon die. It is also manufactured with a super-rectangular strip layout that allows it to be used in a variety of configurations, including high-side, low-side and full-bridge. This flexibility makes the NTD30N02G suitable for a wide range of applications, such as motor control, lighting, appliance control, and power management. Additionally, the NTD30N02G offers excellent switch performance and a wide level of drain-source current handling capability.

The NTD30N02G utilizes a Vertical Dual-Die Structure (VDDS) to provide an ultra-low resistance path from the gate to the drain and source, enabling it to work at high frequencies and high switching speeds. Additionally, the NTD30N02G features a two-layer metal gate construction for improved reliability and performance. The gate is also encased in a metal shield to protect against ESD and other environmental conditions.

In addition to its excellent switch performance and ultra-low resistance, the NTD30N02G also offers robustness and long-term reliability. It is designed with a minimum gate threshold voltage of 2V and a Drain-Source resistance of 8.0mΩ. Its high breakdown voltage of 30V and high operating temperature of 175°C makes it ideal for applications requiring high voltage operation or in environments with wide temperature extremes. Lastly, the NTD30N02G has anAEC-Q101 Qualification that makes it suitable for automotive applications.

To operate, the NTD30N02G requires a positive voltage on the gate in order to turn on. This voltage activates an internal electrical field that pulls the electrons from the source to the drain, allowing current to flow from the drain to the source. The more positive voltage applied, the stronger the electric field, and thus the greater the current flow.

The NTD30N02G is an ideal solution for a variety of low-to-moderate power switching applications. Its rugged N-channel silicon die, high voltage operation capability, and excellent switch performance enable it to be used in a variety of automotive, industrial, and power management applications. Additionally, its AEC-Q101 Qualification makes it an ideal choice for automotive applications.

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