NTD3817N-1G

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The NTD3817N-1G is a single-channel enhancement-mode MOSFET. It is classified into the Transistors - FETs, MOSFETs - Single category. This MOSFET is a lateral device that has been specifically designed for power management applications. This latest semiconductor from Nexperia offers low On-Resistance and low cross-conduction characteristics at higher gate-source voltages. It is capable of providing an excellent performance with a maximum current of 48 A and an RDS(on) – Drain-Source On resistance – of typically 0.45 Ω at 2.5V.

The NTD3817N-1G comes in a TO-263-5 package with low gate charge and easy-to-solder pads. It features low threshold voltage and a fast switching speed. It also provides excellent noise immunity, making it suitable for use in a wide range of applications. It has a built-in forced air cooling system which eliminates the need for heat sinks and makes it suitable for space-constrained designs. This device is ideal for low-RDS(on) drain-source paralleling, as well as for synchronous buck and boost converters.

In terms of application fields, the NTD3817N-1G is suitable for use in switching and linear amplifiers, in smart electronic switches, in motor control systems, in switched-mode power supplies, and in a variety of automotive and industrial applications. It is also suitable for applications such as computer CPU, GPU, and memory power control, LCD TV, and printer/scanner power supply. The TO-263-5 package also makes it suitable for use in applications in battery-powered systems, such as mobile phones and tablets.

The working principle of the NTD3817N-1G is that it functions as a junction between an amplified control circuit and an electrical load. An electrical signal from the control circuit is amplified before passing through the MOSFET. The amplified signal is then given through the MOSFET’s source and is attenuated to the drain. As the amplified electrical signal is passed through the device, its potential is reduced. The amplified electrical current passing through the MOSFET is then discharged to the electrical load. The drain then acts as a current sink and drains the current away from the load.

Any signals that pass through the NTD3817N-1G MOSFET should be limited to the voltage and current ratings as listed in the datasheet. When the input gate voltage exceeds the gate-source voltage threshold, the transistor becomes "on" and the drain current starts to flow. If the input gate voltage is higher than the rated voltage, the transistor can enter saturation. If the drain current exceeds the rated current, the transistor will be destroyed and fail to operate. In conclusion, the NTD3817N-1G is a robust and high-efficient power device, perfect for applications in linear and switching amplifiers, in motor control systems, and in battery-powered systems.

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