NTD3808NT4G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTD3808NT4G is a single N-channel enhancement-mode power field effect transistor (FET) designed for low voltage operation. This metal oxide semiconductor FET (MOSFET) is suitable for high-density applications such as DC-DC converters, automotive motor control and power management. It features a high enough voltage capability to be used in high voltage applications. It is commonly used in applications such as switching DC-DC converters, motor control, relay and dc motor drivers, as well as in low-frequency switching power supplies.

The NTD3808NT4G has a peak drain-source voltage (Vds) of 30 V, a peak gate-source voltage (Vgs) of 20 V, and a maximum continuous drain current (Id) of 8 A. It is available in a compact TO-252 package, which is suitable for surface mount technology. The NTD3808NT4G is generally used in environments where temperature range and voltage are more critical than current, such as switching power supplies.

The NTD3808NT4G works on a principle called "enhancement-mode". This means it is capable of turning voltage into current, a property known as "polarity". In the enhancement-mode, the MOSFET status is in "off" state when there is no voltage applied to the gate. However , the MOSFET is on when there is voltage applied to the gate. The NTD3808NT4G is made of two layers, the p-channel and the n-channel, which can be used for different roles. The p-channel (positive side) and n-channel (negative side) are both made of silicon. The NTD3808NT4G works by using an electric charge to move between the two layers and create a transverse diffusion field between the p-channel and the n-channel.

NTD3808NT4G has many advantages. Firstly, it has a low on-resistance which reduces the conduction losses and improves efficiency. Additionally, it has a high switching frequency which helps reduce power consumption and reduce the size of the overall circuit. It is also very fast in terms of switching. This allows it to be used in applications which require a high switching rate, such as switching inverters and boost controllers. Additionally, it can also be used in high-efficiency dc-dc converter applications where high-speed switching is required. Lastly, the NTD3808NT4G features low gate charge, which helps reduce power dissipation and heat dissipation.

The NTD3808NT4G is widely used in applications, such as automotive motor control, power management, DC-DC converter switching, power supplies, liquid crystal displays, switching transistor circuits, motherboards, and mobile phones. Additionally, it can be used in lighting control and audio applications, due to its low quiescent supply-to-output voltages and its 100 kHz drive capability. It is also used in low-frequency switching power supplies, due to its low input capacitance and low on-state resistance. Furthermore, the NTD3808NT4G is used in various logic circuits such as logic gates, flip-flops, and other digital applications.

In conclusion, the NTD3808NT4G is a single N-channel enhancement-mode power field effect transistor suitable for applications where temperature range and voltage are more critical than current. It is widely used in various applications such as automotive motor control, power management, and DC-DC converter switching. It has a low on-resistance, high switching frequency and low gate charge, making it suitable for high efficiency dc-dc converter applications. Additionally, it is suitable for logic gates, flip-flops, and other digital applications due to its low quiescent supply-to-output voltages and its 100 kHz drive capability.

The specific data is subject to PDF, and the above content is for reference