Allicdata Part #: | NTD3813NT4G-ND |
Manufacturer Part#: |
NTD3813NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 16V 9.6A DPAK |
More Detail: | N-Channel 16V 9.6A (Ta), 51A (Tc) 1.2W (Ta), 34.9W... |
DataSheet: | NTD3813NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 16V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 51A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.75 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.8nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 963pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 1.2W (Ta), 34.9W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD3813NT4G is a type of single, surface-mount N-Channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor), designed to handle a variety of different applications. This MOSFET is specially designed to optimize the existing technology and to offer improved performance in terms of improved on-state conduction and switching properties, reliability and cost.
With these improvements in performance, the NTD3813NT4G is capable of handling heavier switch loads and higher frequencies than previous MOSFET models. This makes it a great choice for applications that require the highest levels of performance, such as those found in modern computing, radio frequency, and power management systems. Additionally, the NTD3813NT4G is highly reliable due to its improved construction qualities.
The working principle of the NTD3813NT4G can be broken down into two main processes; conduction and switching. The conduction process is responsible for controlling the amount of current that can flow through the MOSFET based on the input voltage applied to the drain and the gate. The switching process is then responsible for switching the on and off states of the MOSFET device, allowing the current flow to be adjusted accordingly. This process is possible due to internal manipulation of the transistor\'s threshold voltage.
When the gate voltage becomes greater than the threshold voltage, the MOSFET device becomes on and allows for the current flow that is previously set by the conduction process. Similarly, when the gate voltage drops below the threshold value, the MOSFET device becomes off and prevents any current flow. The transistor can also be programmed to perform both on and off at varying rates based on the voltage applied.
The NTD3813NT4G is a versatile device and can be used in a variety of applications, ranging from small and sensitive power management systems to larger applications such as industrial, automotive and telecoms applications. For example, in automotive applications the NTD3813NT4G can be used to control the transmission and brakes, while in telecoms applications it can be used to control the RF transmission.
The NTD3813NT4G has been designed to meet high levels of performance, reliability and cost, making it a great choice for applications where these qualities are paramount. Its boost in performance and reliability, thanks to its improved technology, leads to improved overall efficiency and longevity in comparison with other models.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NTD3808N-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 12A IPAKN... |
NTD3808N-35G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 12A IPAKN... |
NTD3808NT4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 16V 12A DPAKN... |
NTD3813N-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 9.6A IPAK... |
NTD3813N-35G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 9.6A IPAK... |
NTD3813NT4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 9.6A DPAK... |
NTD3817N-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 7.6A IPAK... |
NTD3817N-35G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 7.6A IPAK... |
NTD3817NT4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 16V 7.6A DPAK... |
NTD32N06LT4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD32N06T4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD30N02T4 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 30A DPAKN... |
NTD3055-150T4 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD32N06L-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A IPAKN... |
NTD32N06-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A IPAKN... |
NTD3055L170-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A IPAKN-... |
NTD3055-094 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A DPAKN... |
NTD3055-094-1 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A IPAKN... |
NTD3055-094-1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A IPAKN... |
NTD3055-094G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A DPAKN... |
NTD3055-150-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A IPAKN-... |
NTD3055-150G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD3055L104 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A DPAKN... |
NTD3055L104G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A DPAKN... |
NTD3055L170 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD3055L170-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A IPAKN-... |
NTD3055L170G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD30N02G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 30A DPAKN... |
NTD32N06 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD32N06-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A IPAKN... |
NTD32N06G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD32N06L | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD32N06L-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A IPAKN... |
NTD32N06LG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 32A DPAKN... |
NTD3055L104-1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A IPAKN... |
NTD3055L104T4G | ON Semicondu... | 0.18 $ | 1000 | MOSFET N-CH 60V 12A DPAKN... |
NTD3055L170T4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD3055-150T4G | ON Semicondu... | 0.18 $ | 1000 | MOSFET N-CH 60V 9A DPAKN-... |
NTD3055-094T4G | ON Semicondu... | -- | 5000 | MOSFET N-CH 60V 12A DPAKN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...