NTD3055L170 Discrete Semiconductor Products |
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Allicdata Part #: | NTD3055L170-ND |
Manufacturer Part#: |
NTD3055L170 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 9A DPAK |
More Detail: | N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surfac... |
DataSheet: | NTD3055L170 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 28.5W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 4.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD3055L170 transistor is a sophisticated FET (Field Effect Transistor) used in a wide variety of applications. It is a single MOSFET (Metal Oxide Field Effect Transistor) that is designed to provide superior performance in terms of switching speed, low noise, and low power consumption. As such, this device can be used in a wide variety of applications in the fields of telecommunications, consumer electronics, automotive, and industrial control.
The NTD3055L170 is a highly-integrated device, as an individual transistor. This allows for easy interchangeability between different types of transistors, depending on the particular application needed. This also reduces the time and cost in designing circuit boards which use multiple transistors. As such, it has become a popular choice among designers who require high-performance transistors.
In terms of its application field, the NTD3055L170 is widely used in applications that require switching between loads at high speed. It is especially suitable for use in switching circuits, where current needs to be switched at higher frequencies. It is also suitable for use in low-noise circuits, as it is known to produce less switching noise than other types of transistors. This makes it a good fit for applications such as mobile phones, where unwanted noise can cause interference to other users.
The NTD3055L170 is also recognized for its low power consumption. This is ideal for applications where energy conservation is important. As such, it is widely used in commercial environments, such as server installations or office automation, where the energy efficiency of the system is of paramount importance.
The working principle of the NTD3055L170 is based on the concept of depletion-mode FETs. This type of transistor works by taking a gate voltage and adding it to the source voltage. The difference between the two values is then compared to the threshold voltage of the device. If the difference is higher than the threshold, the FET will be considered to be “on” and current will flow accordingly. As such, the device can be used to quickly switch on and off a current path, which makes it ideal for use in switching circuits.
Additionally, the NTD3055L170 is designed to be highly reliable, even in harsh environments. This makes it suitable for use in industrial and automotive applications, where it must withstand extreme temperatures, vibration, and other conditions without fail.
The NTD3055L170 is a versatile and reliable FET that is suitable for a wide range of applications. It is highly integrated, allowing for easy interchangeability between different types of transistors, and its low power consumption and reliable performance make it ideal for use in a variety of commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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