NTD32N06L-1G Allicdata Electronics
Allicdata Part #:

NTD32N06L-1G-ND

Manufacturer Part#:

NTD32N06L-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A IPAK
More Detail: N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Thro...
DataSheet: NTD32N06L-1G datasheetNTD32N06L-1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD32N06L-1G is a high-performance logic level power MOSFET that is specifically designed to minimize the on-state resistance (RDS(on)). It is a logic level power MOSFET mainly used for high-power applications. It is a single MOSFET, and the source and drain are interconnected, thus removing the need for a separate matching element.

The NTD32N06L-1G is a N-channel MOSFET with a maximum drain-source voltage rating of 30V, a drain-gate voltage of 20V, and a gate-source voltage of 6V. It is also characterized by low gate charge and a maximum drain current rating of 30A. The drain-source on-state resistance (RDS(on)) of the NTD32N06L-1G is lower than that of comparable MOSFETs, making it ideal for low-resistance high-power applications.

The NTD32N06L-1G is an excellent choice for applications that require high efficiency, low on-state resistance, and low gate charge. It has been used in switching power supplies, motor and solenoid drivers, high-power amplifiers, and voltage regulator modules in electronic systems. It is also used as a switching element in applications such as DC-DC converters and DC motor speed controllers. As it has a low gate charge and its gate-source threshold voltage is low, it can easily be used in high-speed switching applications.

The working principle of the NTD32N06L-1G is that when its gate is pulsed with a positive voltage, electrons flow through a channel connecting the drain and source terminals. This phenomenon is known as the electro-motive force. Applying a negative voltage will make the channel collapse and turn the FET off. The gate voltage needs to be higher than the threshold voltage of the FET to turn it on. The threshold voltage is a low voltage of typically around 4V.

To sum up, the NTD32N06L-1G is a high-performance logic level power MOSFET that is designed to reduce the on-state resistance and is used for high-power applications. Its working principle is that when the gate voltage is higher than the threshold voltage, electrons are driven through the drain and source terminals, resulting in the FET turning on. As it has many advantages like low on-state resistance, high efficiency, and low gate charge, the NTD32N06L-1G is widely used in various applications from switching power supplies to DC-DC converters and motor speed controllers.

The specific data is subject to PDF, and the above content is for reference

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