NVMFD5875NLT3G Allicdata Electronics
Allicdata Part #:

NVMFD5875NLT3G-ND

Manufacturer Part#:

NVMFD5875NLT3G

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 7A SO8FL
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 7A 3.2W Surfac...
DataSheet: NVMFD5875NLT3G datasheetNVMFD5875NLT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.27462
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

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NVMFD5875NLT3G application field and working principle

The NVMFD5875NLT3G is an advanced Power MOSFET Array product series that is utilized in applications where a wide variety of features are desired, such as high power efficiency, small size, and long-term reliability. It is available in many different sizes and shapes, effectively catering to specific customer requirements.

The NVMFD5875NLT3G series consists of two pieces: a single power MOSFET and a set of three additional control gates. The single power MOSFET provides the main power amplification capabilities for the circuit, while the three control gates determine and regulate the flow of current. This is accomplished by letting the power MOSFET turn “on” or “off” depending on the signals sent from the controller.

The NVMFD5875NLT3G series can be utilized in a variety of applications, such as in AC/DC power supplies, high-frequency switching circuits, automotive systems, LED lighting, and electro-mechanical systems. It is also a reliable solution for DC/DC converters and other digital logic applications.No matter the application, the NVMFD5875NLT3G is a highly reliable and efficient option.

The power MOSFET array relies on a process known as “field effect transistor” or FET. This process allows the MOSFET to control the flow of electrons by influencing the gate voltage. The main benefit of this is that the MOSFET can be turned on or off quickly, which allows for the circuit to use less power in order to achieve the same degree of performance.

In order to use the power MOSFET array, the controller (CPU or other electronics) will generate three outputs. The first output is connected to the main gate, which is responsible for controlling the current between the drain and the source. The second output is referred to as the gate driver and it is used to set the voltage for the gate. The last output is known as the gate monitor and it monitors the voltage of the gate, making sure that it remains at optimum levels.

The NVMFD5875NLT3G provides several features that optimize its performance. It features low on-resistance and an integrated protection against short circuit and overvoltage. This ensures that the power MOSFET array is highly efficient and reliable. Furthermore, it features a fast recovery time, short circuit protection and thermal protection, which all contribute to longer life and better performance.

Overall, the NVMFD5875NLT3G is an excellent Power MOSFET Array product series that is highly reliable, efficient, and versatile. It is available in a variety of shapes and sizes, making it an ideal solution for a wide range of applications. With its advanced features, it is capable of providing enhanced performance and reliability in any circuit.

The specific data is subject to PDF, and the above content is for reference

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