NVMFD5C470NWFT1G

Series:	--
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	11.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs:	11.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	420pF @ 25V
Power - Max:	3.1W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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Introduction:

NVMFD5C470NWFT1G is an array of four N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) made by ON Semiconductor. The application field of this MOSFET array is mostly used for logic level switching, load and signal line driving, and power MOSFET gate drive. It is a viable solution for many applications including battery management, protection, and automotive.

Application Field:

The NVMFD5C470NWFT1G is typically used in high-side switching, and low-side switching applications. It is designed with four N-channel MOSFETs in a four gate array with separate gate drive, source pins interconnected and drain pins interconnected. This gives it the ability to provide enhanced system performance when compared to discrete MOSFETs.Specifically, the MOSFET array can be used to provide high side switching by connecting a single gate drive to the gate of all four MOSFETs and connecting the source to the output. This allows the array to increase the drive current, reduce the input capacitance, and minimize the ground inductance.The NVMFD5C470NWFT1G is also ideal for low side switching by connecting the gate, source and drain pins of the MOSFETs separately. This makes it easier to optimize the switching characteristics and reduce the total power losses when driving multiple loads.In addition to high and low side switching, the NVMFD5C470NWFT1G can also be used for logic level switching, load and signal line driving and power MOSFET gate drive.

Working Principle:

The NVMFD5C470NWFT1G operates by using an array of four N-channel MOSFETs which are individually controlled by gate voltage. When the gate voltage is increased from 0 to Vg, the MOSFET is turned on, allowing a continuous current to flow through the drain and source. The MOSFET is then turned off when the gate voltage drops below a certain threshold.The array of four MOSFETs allows the user to control each one individually and also provides enhanced system performance as compared to discrete MOSFETs. The four separate drain and source pins allow the user to optimize the switching characteristics and minimize the power losses when driving multiple loads.

Conclusion:

In conclusion, the NVMFD5C470NWFT1G is an array of four N-channel MOSFETs designed to perform high side switching, low side switching, logic level switching, load and signal line driving and power MOSFET gate drive. It is optimized to maximize system performance and minimize power losses when driving multiple loads.

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