Allicdata Part #: | NVMFS5C682NLAFT3G-ND |
Manufacturer Part#: |
NVMFS5C682NLAFT3G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 8.8A 25A 5DFN |
More Detail: | N-Channel 60V 8.8A (Ta), 25A (Tc) 3.5W (Ta), 28W (... |
DataSheet: | NVMFS5C682NLAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.13415 |
Vgs(th) (Max) @ Id: | 2V @ 16µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta), 25A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C682NLAFT3G is a single n-channel metal–oxide–semiconductor field effect transistor (MOSFET). It is designed for use in applications such as high-side switch drivers, audio and video switchers, and other switching applications requiring high speed and low on-resistance.
MOSFET transistors are one of the key components in modern electronics because of their high levels of operation, low power dissipation, and efficient switching characteristics. The NVMFS5C682NLAFT3G has a low drain-to-source on-resistance of 6.82 Ω in a compact package, making it suitable for use in high-current applications.
The NVMFS5C682NLAFT3G uses its MOSFET technology to control the flow of current across the transistor, allowing it to act as either a switch or an amplifier. When the transistor is switched on, the current flows between the source and the drain terminals, allowing current to pass through the device. When the transistor is switched off, the current is blocked, preventing current from flowing. This process can be used to control the flow of current in a wide range of applications.
The NVMFS5C682NLAFT3G is a low-voltage MOSFET that is optimized for use with 5 V inputs. It features an integrated 5 V voltage regulator, enabling it to be used in high-side switch applications without the need for an external voltage regulator. This makes it an ideal choice for applications such as audio and video switchers, as well as battery-operated devices.
The NVMFS5C682NLAFT3G also features a low input capacitance and low threshold Voltage, allowing it to operate at high speeds with high efficiency. This makes it well-suited for applications such as high-frequency switching, as well as digital signal control. The low on-resistance and integrated voltage regulator also make the NVMFS5C682NLAFT3G ideal for use in automotive applications, where current consumption must be kept to a minimum.
The NVMFS5C682NLAFT3G is designed for use in high-side switch applications, where the device can be used to switch high-current loads. The low on-resistance and high-frequency performance of the NVMFS5C682NLAFT3G make it ideal for use in battery-operated devices such as phones, tablets, and other portable electronic devices. It is also suitable for use in audio and video switchers and other applications requiring high-speed switching.
In summary, the NVMFS5C682NLAFT3G is a single n-channel MOSFET transistor optimized for use in high-side switch applications. It features low on-resistance, integrated 5 V voltage regulator, low input capacitance, and low threshold voltage. This makes the NVMFS5C682NLAFT3G ideal for use in applications such as high-side switch drivers, audio and video switchers, and other switching applications requiring high speed and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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