NVMFS5C628NLT3G

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NVMFS5C628NLT3G is a single, 60V N-Channel Logic Level PowerTrench® MOSFET. This device was designed to minimize the on-state resistance while providing rugged, reliable performance. It features PowerTrench® technology, which combines trench MOSFET design techniques with robust gate oxide technology to provide excellent performance. The NVMFS5C628NLT3G has a low threshold voltage of 1.8V and an on-state drain-source resistance of 4.8mΩ @ 10V. It is rated for single-pulse avalanche energy of 18.2mJ.

The NVMFS5C628NLT3G is found in many applications, such as Power Management, Automotive, Computing, and Mobile. Its wide voltage range and low on-state resistance make it ideal for power switching applications. The device’s low threshold voltage makes it suitable for logic-level gate drive applications. It can also be used in synchronous buck converters, load-switch applications, and Motor Control applications.

The NVMFS5C628NLT3G is an N-Channel power MOSFET based on PowerTrench® technology. It features a vertical channel structure, which provides lower on-state resistance and improved switching performance. The device is fully protected against avalanche current and transient dV/dt events up to the absolute maximum ratings. It also features an ESD protection structure designed to provide robust protection up to the JEDEC standard, JESD22-A114.

The NVMFS5C628NLT3G has two terminals that are used to control the flow of electrons. The gate terminal is connected to the drain and is used to control the flow of current between the drain and the source. It works by changing the voltage at the gate terminal which, in turn, changes the width of the transistor’s conducting channel. As the voltage increases, the conducting channel expands, allowing more electrons to flow from the drain to the source. As the voltage decreases, the conducting channel shrinks, reducing the number of electrons that are able to flow through the device.

The NVMFS5C628NLT3G is a versatile device that is suitable for a wide range of applications. It is ideal for power switching, logic-level gate drive, synchronous buck converters, load-switches, and motor control applications. Its low threshold voltage and low on-state resistance make it ideal for many power management and automotive applications. Additionally, its robust ESD protection structure and low-profile package make it suitable for mobile applications.

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