NVMFS5C460NLT3G

NVMFS5C460NLT3G is a single-bit logic-level enhancement mode Field Effect Transistor (FET). It is designed for use in a wide range of applications, including high-speed switching operations, analog switching, pulse timing, motor control and signal processing. It has a wide gate threshold voltage range and can handle high gate voltages and current values.

FETs are semiconductor devices which can control the flow of electrical current between two contacts or terminals, when an electrical charge is applied to a third terminal. MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are special types of FETs which use a gate to control the conductive channel between the drain and source.

The NVMFS5C460NLT3G is an enhancement-mode MOSFET with a voltage and current ratings of 60V and 1.5A respectively, and a continuous current rating of 3.5A at 25ºC. It is constructed with a silicon chip encapsulated in a plastic SOT-403 package and is designed for direct connection to the gate to the source.

The NVMFS5C460NLT3G has two very important working principles. The first is the enhancement-mode operation, in which no current flows through the MOSFET until a gate voltage is applied and exceeds the source voltage. At this point, current will start to flow through the device. The second operating principle is the threshold voltage, which is the minimum gate voltage required to turn the MOSFET on. The NVMFS5C460NLT3G has a threshold voltage of 3V.

This single-bit logic level enhancement-mode MOSFET is suitable for a wide range of applications. It is popular in systems which require a high-speed on/off switching or analog switching of signals. It is commonly used in audio and video equipment, motor control applications, pulse timing circuits, signal amplifiers, power supplies, DC-DC converters, educational and test equipment, experimental designs, and other engineering projects.

The NVMFS5C460NLT3G is a high-performance MOSFET which offers reliable and efficient performance in a wide range of applications. Its capability to withstand high gate voltages and currents make it suitable for use in a variety of circuit designs.