NVMFS5C456NLWFAFT1G

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NVMFS5C456NLWFAFT1G is an enhancement-mode field effect transistor (FET) that is specially designed for use in on-chip non-volatile memory applications. It operates in an enhancement mode and is housed in a Quad-Flat No-Lead (QFN) package.

It works on the principle known as “body effect”, which is when a positively charged mobile substance (e.g. electrons) is moved from one area to another, the combination of the positrons and the electrons creates a localized electric field at the electron source. This electric field impedes the flow of the electrons, lowering their speed and thus allowing a controlled amount of current to pass through the transistor.

NVMFS5C456NLWFAFT1G has several distinguishing features that set it apart from other FETs. First, it has a low on-resistance, making it ideal for low-noise operations. Second, its on-resistance is highly symmetrical between drain and source pins, which results in better noise characteristics. Finally, it has a leakage current rating of 4x10-8A, meaning that more current can be delivered for improved processing performance.

The NVMFS5C456NLWFAFT1G is the ideal solution for applications where high-speed switching, low leakage current and low noise are paramount. It is used widely in CMOS memories, high-density memories, and other on-chip non-volatile memory applications, such as Flash and EEPROM. It is also used in voltage regulators, power management switches, and other logic applications.

In summary, the NVMFS5C456NLWFAFT1G is an enhancement-mode FET that is specially designed for high-speed, low leakage, and low noise applications. Its low on-resistance, highly symmetrical between drain and source pins, and an impressive leakage current rating make it a perfect choice for on-chip non-volatile memory applications, power switches, and voltage regulators.

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