
NVMFD5C462NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFD5C462NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFD5C462NLT1G |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 40V 84A S08FL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 18A (Ta), 84A ... |
DataSheet: | ![]() |
Quantity: | 15000 |
1500 +: | $ 0.36808 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 84A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Power - Max: | 3W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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The NVMFD5C462NLT1G is one of the most versatile transistors currently on the market. It belongs to the family of Field Effect Transistors (FETs), and is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) array. It is designed to perform high voltage and current operations in a wide range of applications. This type of transistor can be used for switching, amplifying, and for driving low resistance loads.
The NVMFD5C462NLT1G is composed of 4 identical pairs of N- and P-channel devices, each pair having two terminals. It is well suited for operations where low on-resistance is essential and provides excellent performance in many applications. It has a high input impedance and provides a wide range of operating voltage (Vdss) from 5 to 42V. The package is composed of a single substrate and contains 8 pins, 6 of which are control/input pins and two of which are output/drain pins.
The working principle of the NVMFD5C462NLT1G is based on the concept of a three-terminal device. The drain and the source pins are used to provide the voltage, while the gate pin is used to control the voltage and current flowing through the device. By applying a voltage to the gate pin, the current between the drain and source pins can be controlled and thus the device can be used as an amplifier or as a switch. When the voltage applied to the gate pin is increased, the current between the drain and source increases, and when the voltage is decreased, the current is reduced.
The NVMFD5C462NLT1G is an ideal component for operations requiring high voltage and current capabilities. It is suitable for digital signal processing applications such as waveform generators and digital-to-analog converters. Also, it can be used for high-voltage switching applications, including power conversion and motor control. Furthermore, when combined with other components, it can also be used for analog signal processing such as filters and amplifiers.
In conclusion, the NVMFD5C462NLT1G is a versatile component that can be used in a variety of applications. It is a reliable component due to its compact design and low on-resistance, and can provide excellent performance in different signal processing operations. With the right combination of other components, it can be used for a wide range of signal processing operations, and thus is an excellent choice for many applications.
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