Allicdata Part #: | NVMFS5832NLT3G-ND |
Manufacturer Part#: |
NVMFS5832NLT3G |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 120A SO8FL |
More Detail: | N-Channel 40V 21A (Ta) 3.7W (Ta), 127W (Tc) Surfac... |
DataSheet: | NVMFS5832NLT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.35778 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 127W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVMFS5832NLT3G transistor is an advanced field effect transistor (FET) that falls under the category of single FETs and MOSFETs. It utilizes n-channel enhancement mode vertical DMOS architecture with a low operating current to provide high voltage and drive current. The transistor is ideal for use in industrial, automotive and consumer electronics applications, making it one of the most versatile transistors for industrial and automotive applications. It is also energy efficient, making it well suited for energy-sensitive applications.
The NVMFS5832NLT3G transistor is designed with two terminals; source and drain. When an electric charge is applied to the gate terminal, it modulates the channel that forms between source and drain. This channel allows current to flow between the source and drain and provides for modulation of the current strength. As the voltage increases, the effective resistance of the channel drops, allowing more current to flow between the source and drain. By modulating the current at the gate terminal, the voltage drop (VDS) can be controlled and the amount of current that passes through the device can be adjusted.
The NVMFS5832NLT3G transistor is a helpful component in switching applications where its fast switching performance is invaluable. In such applications, its fast switching time allows it to switch between high and low states on demand while preventing undesirable leakage currents in between. When used in high temperature environments, it has the ability to recover rapidly, ensuring optimal performance in extreme conditions. This ensures more reliable operation, improved efficiency and better system stability for a wide range of applications.
The NVMFS5832NLT3G transistor utilizes a lower gate-to-source voltage (Vgs) than traditional FETs and MOSFETs. This allows the transistor to operate at higher drain-to-source voltages (Vds) without the need for extra power. Higher efficiency is achieved, resulting in reduced energy consumption. Furthermore, its features also include higher breakdown voltage (BVdss) and drain-to-source diode ratings, which makes it suitable for use in demanding applications.
The NVMFS5832NLT3G transistor is an ideal choice in applications such as motor control, power supplies, audio amplifiers, motor starter circuits and motor protection circuits. due to its fast switching capabilities, it is also well suited for use in battery chargers and digital video and audio switching devices. Due to its higher endurance and better surge current ratings, it is also perfect for use in lightning protection systems and voltage regulator circuits. The NVMFS5832NLT3G transistor also offers higher thermal dissipations, allowing it to be employed in high temperature environments. Its small design also makes it ideal for use in electronics projects with limited space.
In summary, the NVMFS5832NLT3G transistor is an advanced field effect transistor (FET) that falls under the category of single FETs and MOSFETs. It features advanced features such as a low gate-to-source voltage (Vgs), higher breakdown voltage (BVdss) and longer switching time, making it an ideal choice for high temperature and switching applications. With its small size and high efficiency, the NVMFS5832NLT3G transistor is an ideal choice for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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