Allicdata Part #: | NVMFS6H800NWFT1G-ND |
Manufacturer Part#: |
NVMFS6H800NWFT1G |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRENCH 8 80V NFET |
More Detail: | N-Channel 80V 28A (Ta), 203A (Tc) 3.8W (Ta), 200W ... |
DataSheet: | NVMFS6H800NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.99474 |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 203A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5530pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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NVMFS6H800NWFT1G application field and working principle
NVMFS6H800NWFT1G is a part of an advanced series of low-voltage MOSFETs from STMicroelectronics. As part of the the N-channel enhancement mode FET (FET) family, the NVMFS6H800NWFT1G offers a wide range of features designed to help meet various application needs. This document provides an overview of the NVMFS6H800NWFT1G\'s general usage and operation principles.
Application Field
The NVMFS6H800NWFT1G is designed to be used in applications where low voltage is required. It can be used as an energy efficient current source, as a low-voltage switch (turn a device on or off), or as a current limiter and amplifier. The device can also be used in microcontrollers and other low-level embedded systems for power management and for signal conditioning.
The NVMFS6H800NWFT1G is suitable for use in a wide range of medium and low voltage applications. It is also ideal for use in smart cards, RFID tags, automotive and industrial applications. It is also versatile, allowing for a range of gate configurations, from single-gate to dual-gate, as well as working with both N-channel and power MOSFETs.
Working Principle
At its core, the NVMFS6H800NWFT1G FET works by controlling an input signal (gate) to reduce the flow of current through the source and drain terminals. When the gate signal is high, the device allows current flow, while when it is low, current flow is prevented. The gate can be driven by an external signal or voltage, such as the 5V or 12V output of a microcontroller or computer.
The NVMFS6H800NWFT1G FET can be used as either a single device or in pairs. When the source and drain terminals of both devices are connected together, the transistors form a bidirectional switch, allowing for alternating current control. When operated in this configuration, the FETs can be used to drive motors, as well as providing adjustable current sources. The FETs can also be used in conjunction with op-amps to provide amplified signals.
Using the NVMFS6H800NWFT1G FET to perform any of the previously mentioned functions is simple and involves connecting the source and drain terminal of the FET to a power supply, connecting the gate terminal to an input signal, and applying a voltage to the gate.
The specific data is subject to PDF, and the above content is for reference
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