Allicdata Part #: | NVMFS5C460NWFT1G-ND |
Manufacturer Part#: |
NVMFS5C460NWFT1G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 40V 5.3 MOHM T6 S08FL SIN |
More Detail: | N-Channel 40V 19A (Ta), 71A (Tc) 3.6W (Ta), 50W (T... |
DataSheet: | NVMFS5C460NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.25850 |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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NVMFS5C460NWFT1G is a single logic N-channel MOSFET (Metal Oxide Semiconductor Field-effect Transistor). It is a three-terminal voltage-controlled semiconductor device that are widely used in numerous applications. The NVMFS5C460NWFT1G is also well known for its robustness and fast switching speed.
The NVMFS5C460NWFT1G has three terminals for connections which are the source, the gate and the drain. An electric field is created between the gate and the source of the MOSFET, which modulates the conductivity between the source and the drain. In order to achieve enhanced performance, the NVMFS5C460NWFT1G is designed to include a dielectric layer between the gate and the channel of the operating transistor.
The NVMFS5C460NWFT1G is often used in applications that require fast switching speeds such as power electronics, automotive circuits and consumer products. For example, the NVMFS5C460NWFT1G can be used as active switches within DC-DC converters, low-side switches in LED driver applications, buffers, inrush current limiters and so on. The NVMFS5C460NWFT1G is also used for embedded microcontrollers for logic control circuits, keypads, and various switching functions.
The NVMFS5C460NWFT1G also has built-in features that ensure its robustness and reliability. The device is designed with an internal ESD protection with a voltage withstand of up to 500 V, a high-temperature performance up to 175°C, and an output current of up to 4.6 A. This enhances the applications of the NVMFS5C460NWFT1G in a wide range of harsh environments.
The NVMFS5C460NWFT1G is also designed to minimize the risk of short-circuiting, static electricity and surface contaminants. It has a built-in gate protecting circuit that prevents damage from static electricity and a highly sensitive metal shield that protects from surface contaminants such as dust and other debris. This makes it suitable for use in highly sensitive and critical applications.
The NVMFS5C460NWFT1G is an easy to use and efficient MOSFET. With its broad range of features and applications, it is an ideal choice for a variety of applications that require fast, reliable and robust switching.
The specific data is subject to PDF, and the above content is for reference
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