NVMFS5C604NLWFAFT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5C604NLWFAFT1G is a high-performance, high-frequency N-channel enhancement-mode field-effect transistor (FET). It has very low Ron and is excellent for high-side switching applications. This device provides superior on-state performance with reduced switching losses, which make it well suited for various switching applications, such as smart power switches, DC-DC converters and other battery solutions.

The NVMFS5C604NLWFAFT1G features an on-resistance (Ron) of only 95 mOhms, a maximum drain-source threshold voltage (VGS) of 4.5 V, a maximum drain-source voltage (VDS) of 20 V and a maximum drain current (ID) of 40 A. It also has a maximum operating temperature range of 150°C and comes in a 4-pin surface mount package.

The main application fields for the NVMFS5C604NLWFAFT1G are in high-side switching applications, such as switching power supplies, DC-DC converters, power switches or other battery solutions. The FET’s excellent on-state performance and low Ron provide superior switching times and higher efficiency than traditional MOSFETs, which makes it well suited for these applications. It also has a low gate drive voltage requirement, which makes it compatible with most microcontroller and FPGA devices.

The working principle of the NVMFS5C604NLWFAFT1G is based on the N-MOSFET operating characteristics. In this field-effect transistor, the drain-source current is modulated by a voltage applied to the gate. When this voltage is applied, the current between the drain and the source increases exponentially, and the drain-source voltage can be controlled solely by the voltage applied to the gate. The device features a very low resistance, which in turn helps to lower the power consumption of the circuit, as well as reduce reverse-transfer capacitance and improved switching speeds.

In summary, the NVMFS5C604NLWFAFT1G is a high-performance, high-frequency N-channel enhancement-mode field-effect transistor that is well suited for high-side switching applications, such as power switches and DC-DC converters. Its low Ron and excellent on-state performance help reduce power consumption and provide superior switching times with higher efficiency than traditional MOSFETs. Its low gate drive voltage requirement also makes it compatible with most microcontroller and FPGA devices.

The specific data is subject to PDF, and the above content is for reference