Allicdata Part #: | NVMFS5C673NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C673NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V SO8FL |
More Detail: | N-Channel 60V 3.6W (Ta), 46W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C673NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 35µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C673NLWFT3G is a high voltage and high speed field effect transistor (HFET). It comes in an industry standard 3-pin SOP package and is widely used in applications like power amplifying, low-noise amplifiers, and oscillator circuits. This article will discuss the application field of the NVMFS5C673NLWFT3G as well as its working principle.
Application Fields
The NVMFS5C673NLWFT3G is widely used in digital circuits and other applications that require a high switching speed and low noise. It is a great choice for pulse amplifiers and for high accuracy switches. As it has a small footprint and a low cost, the transistor can also be used in a variety of other applications like amplifiers, oscillators, digital-to-analog converter (DAC) circuits, AC-DC power conversion, motor control, and low power transistors. Additionally, the transistor is often used in audio applications like power amplifiers, audio systems, and active speakers.
Working Principle
At its core, the NVMFS5C673NLWFT3G is a metal-oxide-semiconductor field-effect transistor (MOSFET) which uses a combination of a gate, source, and drain terminal to control the flow of current. By applying a voltage to the gate terminal, the gate oxide layer is used to reduce the resistance of the transistor. This reduces the resistance between the source and the drain, allowing current to flow more easily. The gate voltage is used as a means of controlling the flow of current, allowing for high levels of precision and speed.
When the gate voltage is below the threshold voltage, the MOSFET is in the "off" state, meaning no current will flow between the source and the drain. If the gate voltage is above the threshold voltage, then the MOSFET will be in the "on" state. In this state, a small current will start flowing between the source and the drain and this current will increase as the gate voltage is increased. The maximum current (Id) which the MOSFET can pass depends on the transistor features and the drain-source voltage (Vds).
The NVMFS5C673NLWFT3G features a high voltage rating of up to 600V and is able to pass a maximum current of up to 2.5mA. The maximum power dissipated by the transistor is 7 Watts, meaning that it is suitable for power amplifying and switching applications. The transistor is capable of very fast switching speeds and can also be used for low-noise operations due to its low power dissipation.
The NVMFS5C673NLWFT3G is a widely used high voltage and high speed field effect transistor. Its small footprint and low cost, as well as its high voltage rating and fast switching speeds make it useful for a variety of different digital and audio applications. It can be used for low-noise amplifiers, pulse amplifiers, DAC circuits, AC-DC power conversion, audio systems, active speakers and many other applications.
The specific data is subject to PDF, and the above content is for reference
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