NVMFS5844NLWFT3G

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1460pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	12 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11.2A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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Introduction to NVMFS5844NLWFT3G

The NVMFS5844NLWFT3G is a field-effect transistor (FET) designed for use in applications requiring a high level of amplifier performance, such as power management and communication systems. It is a single, low-voltage N-channel MOSFET that offers exceptional low-voltage performance and low gate charge. The NVMFS5844NLWFT3G is designed to be a reliable, cost-effective, and easy-to-use solution for a wide range of amplifier applications.The NVMFS5844NLWFT3G is a low-voltage MOSFET that offers exceptional low-voltage performance and low-gate charge operation. It has a maximum drain-to-source voltage of 20V and a maximum drain current of 10A. The NVMFS5844NLWFT3G is designed to be used in applications where a high performance amplifier is required, such as power management and communication systems.

Application Field and Working Principle

The NVMFS5844NLWFT3G is a versatile device with a wide range of applications in various fields. Most common applications of the NVMFS5844NLWFT3G are in power supply design, power management, and communication systems.Power supply design: NVMFS5844NLWFT3G can be used in power supply design where a low-voltage FET is needed. This allows designers to reduce system cost, lower power consumption, and reduce overall design complexity.Power management: NVMFS5844NLWFT3G can be used in power management applications such as battery charger, LED driver, and solar panel controller. The low-voltage performance of the NVMFS5844NLWFT3G enables a low power consumption and an efficient power conversion.Communication systems: NVMFS5844NLWFT3G can be used in communication systems such as wireless transceivers, base stations, and cable modems. The low gate charge and low on-resistance of the NVMFS5844NLWFT3G deliver superior performance in these systems.The working principle of the NVMFS5844NLWFT3G is based on the field effect transistor (FET) technology. A FET is a type of transistor that works by modulating a flow of electrons between a source and a drain by applying a voltage to the gate. The NVMFS5844NLWFT3G is a single, low-voltage N-channel MOSFET, which means it has a single, low-voltage source on one side and a single, low-voltage drain on the other. By applying an electric field to the gate, the NVMFS5844NLWFT3G can be used to control the flow of current between the source and the drain. The NVMFS5844NLWFT3G also features low gate charge and low on-resistance, which makes it an ideal device for applications requiring a high level of amplifier performance. The low on-resistance of the NVMFS5844NLWFT3G allows for a low power consumption and an efficient power conversion.

Conclusion

In conclusion, the NVMFS5844NLWFT3G is a single, low-voltage N-channel MOSFET designed for use in applications requiring a high level of amplifier performance, such as power management and communication systems. It offers exceptional low-voltage performance and low gate charge, which makes it an ideal device for these applications. The NVMFS5844NLWFT3G is a versatile device with a wide range of applications in various fields, such as power supply design, power management, and communication systems.

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