NVMFD5C668NLT1G Allicdata Electronics
Allicdata Part #:

NVMFD5C668NLT1GOSTR-ND

Manufacturer Part#:

NVMFD5C668NLT1G

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: T6 60V S08FL DUAL
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68...
DataSheet: NVMFD5C668NLT1G datasheetNVMFD5C668NLT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.44590
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Power - Max: 3W (Ta), 57.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

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NVMFD5C668NLT1G is an array of four N-channel Silicon-Gate MOSFETs with a built-in depletion-type load resistor. It is a high-reliability device that is suitable for high-frequency, high-voltage applications such as inverter, motor drive, and power supply control.

NVMFD5C668NLT1G is a fourN-channel Silicon-Gate MOSFET array with a built-in depletion-type load resistor. The four N-channel MOSFETs are arranged in an insulated-gate configuration to form a single four-transistor array. It features an integrated gate-source resistor for increased reliability and reduced power consumption. The built-in depletion-type resistor helps to limit the device\'s on-resistance and increase its life expectancy. The device is rated for operation at a high frequency and a high voltage of up to 400V. It also has a low output capacitance which allows for fast switching and high efficiency.

NVMFD5C668NLT1G is typically used in motor drive, inverter, and power supply control applications. The high frequency and high voltage rating make it well suited for these applications. It can also be used in high power systems where the current is too high for a single MOSFET to handle. The built-in resistor helps to increase the life expectancy of the device and reduce power consumption.

The operation of NVMFD5C668NLT1G involves source-to-drain current flow when a voltage from the gate to source is applied. When the gate-to-source voltage reaches a certain threshold, the source-to-drain current increases significantly. This increases the output power of the device and allows it to handle high currents. The built-in depletion-type resistor helps to limit the device\'s on-resistance and reduce the power consumption.

NVMFD5C668NLT1G is an integrated power device that is suitable for a variety of high frequency and high voltage applications. It is an array of four N-channel MOSFETs that are arranged in an insulated-gate configuration. It has a built-in resistor to improve its reliability and reduce power consumption. It is typically used in motor drive, inverter, and power supply control applications.

The specific data is subject to PDF, and the above content is for reference

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