PSMN005-55B,118

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PSMN005-55B is a single, advanced, vertical-structure, low-voltage, N-channel enhancement-mode, power MOSFET with a breakdown voltage (BVDSS) of 55V and a continuous drain current of 115A. It is fabricated using advanced, back-gate-controlled trench technology, a vertical cell structure, and selected double-diffused metal oxide semi-

The power MOSFET is designed primarily for applications such as DC-DC or AC-DC power conversion, DC motor control, and switching power supplies, where high voltage and power dissipation is required. It combines the low on-resistance and low gate charge of a depletion-mode device, with the high pinch-off voltage of an enhancement mode MOSFET.

The PSMN005-55B uses a vertical structure device architecture, which creates a lower on-resistance (RDS(ON)) and gate charge (Qg) with a higher resitance of thermal runaway. This structure also eliminates parasitic bipolar effects. The device\'s wide voltage range (from 5V the breakdown voltage of 55V) make it suitable for a variety of applications. The device can be used for both high side and low side switching applications.

The design of the PSMN005-55B allows for a low rDS(on) for a given Vgs as compared to traditional technologies. This is due to the optimized vertical cell structure and improved on-resistance-voltage (R-V) characteristics. The RDS(ON) of the device is typically below 0.007 ohms at 10V and 0.009 ohms at 4.5V. It also has a high power-dissipation capability, with the maximum power dissipation (PD) at 55V being 164W.

The operating and switching characteristics of the PSMN005-55B are determined by its drain-source voltage, drain current, source-drain voltage, gate capacitance, and gate-source voltage.

The drain-source voltage (VDS) of the PSMN005-55B determines the forward voltage drop of the MOSFET. The drain current (ID) is the current flowing through the device. The source-drain voltage (VSD) is the voltage between the source and the drain of the MOSFET. The gate capacitance (Cg) is the capacitance of the gate, which affects the turning-on and -off of the device. The gate-source voltage (VGS) is the voltage applied between the gate and the source, which affects the on-resistance of the device.

The PSMN005-55B has a low input capacitance, low gate charge, and fast switching speed. Its fast switching speed allows it to be used in high frequency applications. The device can be operated at various gate voltage levels and drain current levels, but the device is usually operated in the “enhancement” mode. This means that the gate voltage must be at voltages higher than the drain-source voltage in order to turn the device on.

The PSMN005-55B is a reliable and robust MOSFET, which is capable of handling high current and voltage levels, and provides superior performance for high power conversion applications. Its compact vertical cell structure also offers improved thermal characteristics and enhanced device breakdown performance. Its low RDS(ON) and low gate charge, together with its high peak current and high power capability, ensure superior performance in various circuits, and make it suitable for a variety of power switching applications.

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