PSMN005-75P,127

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Introduction

PSMN005-75P,127 is a single N-channel enhancement mode MOSFET manufactured by NXP Semiconductors and rated with a maximum drain source voltage of 75 Volts and a peak current of 127A. N-channel MOSFETs are three-terminal unipolar voltage-controlled devices that offer high switching speeds, dynamic doublers and bridges. It is designed for switching applications where high drain-source voltage and low on-resistance is required.

Application Field

The PSMN005-75P,127 offers high switching performance and low on-resistance in a variety of applications. It has extended VGS (especially with the optional high voltage gate oxide work function) for applications requiring gate drive to high gate voltages such as motor drive and high side switching applications. Its low on-resistance, high current handling capability and low capacitance, makes it ideal for automotive, power conversion and fast switching applications.

The PSMN005-75P,127 can be used in a variety of power management and control applications such as wind energy, solar energy, battery management, driverless lighting and energy management. It can also be used in AC/DC and DC/DC converters, motor drives, cellphone base stations and green public lighting.

Working Principle

The PSMN005-75P,127 is a single N-channel enhancement mode MOSFET which consists of one p-type layer between two n-type layers. N-channel transistors are controlled according to the Gate-Source voltage, which is also referred to as VGS. Increasing the Gate-Source voltage (VGS) will lead to a larger current flow which allows the MOSFET to switch on and off faster than a P-channel MOSFET.

The Gate-Source voltage is the main controlling factor of an N-channel MOSFET and allows for precise control of the output current. The PSMN005-75P,127 is designed with high voltage gate oxide which can handle up to 75V, for applications that require higher voltages for gate drive.

When the PSMN005-75P,127 is in its off state, no current flows between Drain and Source. When the Gate-Source voltage (VGS) is increased to the threshold voltage (VTH) of the device, the MOSFET turns on and a the drain current (ID) is limited by the load resistor (RD). As the Gate-Source voltage increases, the Drain current increases exponentially.

Conclusion

The PSMN005-75P,127 is a single N-channel MOSFET manufactured by NXP Semiconductors and rated with a maximum drain source voltage of 75 Volts and a peak current of 127A. It is ideal for applications where high drain-source voltage and low on-resistance is required, and is used in a variety of power management and control applications such as wind energy, solar energy, battery management, driverless lighting, energy management, AC/DC and DC/DC converters, motor drives, cellphone base stations and green public lighting. The principle of operation of the PSMN005-75P,127 is that it is controlled according to the Gate-Source voltage (VGS) which increases the current flow when increased.

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