![PSMN075-100MSEX Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1727-1085-2-ND |
Manufacturer Part#: |
PSMN075-100MSEX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 18A LFPAK33 |
More Detail: | N-Channel 100V 18A (Tj) 65W (Tc) Surface Mount LFP... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 773pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 71 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tj) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN075-100MSEX is an electronic component manufactured by NXP Semiconductors. It is a special type of field-effect transistor (FET), also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single component FET, which means it is composed of only one source, drain and gate terminal.
The PSMN075-100MSEX is designed to be a part of applications such as load switches, power management, motor drivers and other kinds of power electronics. It is particularly suited for use in systems that require high voltage levels and low standby current. The main advantage of this component is its excellent ON resistance, making it an ideal choice for applications that need to handle high power levels.
The working principle of the PSMN075-100MSEX is relatively simple. It works by controlling the conductivity of a circuit at certain voltage levels by altering the amount of charge that can flow through it. This is done by altering the potential difference across the gate of the device. In a MOSFET, the gate of the device is insulated, which allows it to be less sensitive to changes in voltage and current.
When no voltage is applied to the gate, the transistor behaves as an open switch, meaning no current can flow through it. When a voltage is applied, the charge can flow through the device, and the resistance of the device will decrease. The lower the applied voltage, the greater the resistance, and the higher the voltage, the less the resistance.
The gate of the transistor is also used to turn the device off, by applying a negative voltage. This will cause the channel to close, and current will be unable to flow through it. This is why the PSMN075-100MSEX is useful for applications that require extremely low current, as a negative voltage can easily keep the device from operating.
This device is capable of operating at extremely high frequencies, making it an ideal choice for applications with high-speed switching. It also has a low gate charge, meaning it can be quickly and efficiently operated. This makes it an excellent choice for applications where power efficiency is a must.
The PSMN075-100MSEX is an extremely versatile device, and is quickly becoming one of the most popular devices for use in power electronics applications. Its ability to handle high voltages and low standby current, combined with its efficient operation and high switching frequency, make it an ideal choice for modern power electronic systems.
The specific data is subject to PDF, and the above content is for reference
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