PSMN2R0-30YL,115

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Transistors are devices used to control the amount of current used in an electric circuit. FETs, or field-effect transistors, are one type of transistor. MOSFETs, or metal-oxide-semiconductor field-effect transistors, are a type of FET with a structure that allows for more efficient control of current flow. The PSMN2R0-30YL is a single-channel n-channel MOSFET designed for power management applications. This article will provide an overview of the features, application field, and working principle of the PSMN2R0-30YL.

Features of PSMN2R0-30YL

The PSMN2R0-30YL is a 30-Volt, single-channel N-channel MOSFET designed for power management applications. It has a 0.2 microOhm resistance at 10A and an RDS(on) Max of 0.175 microOhm. It is also designed to minimize power loss and has a low gate-charge (Qg) of 7nC. Additionally, it has a low turn-on threshold voltage, making it suitable for use in low voltage devices. The PSMN2R0-30YL requires a single power supply to operate, and the device is able to switch current on and off at fast, source-synchronous speeds. This MOSFET has a minimum breakdown voltage of 30 volts and an operating temperature range of -55°C to 175°C. The PSMN2R0-30YL is packaged in a 2 x 2 millimeter typ SO-8W surface mount package.

Application Field of PSMN2R0-30YL

The PSMN2R0-30YL is designed for use in power management circuit applications. It is widely used in consumer electronics, such as mobile phones, tablets, and laptops. It is also used in automotive and industrial applications such as power converters, motor controls, and lighting. Additionally, it is used for power supply regulation, and power switching in a variety of applications ranging from consumer electronics to industrial automation and control.

Working Principle of PSMN2R0-30YL

The PSMN2R0-30YL is an n-channel MOSFET, which means that it allows current to flow between the source and drain when the gate voltage applied is greater than the threshold voltage. When a voltage higher than the threshold voltage is applied to the gate electrode, it attracts electrons to the gate electrode, thus creating an inversion layer between the gate and the drain. This layer permits the flow of electrons to the drain side when a voltage is applied on the source side. This MOSFET can be used to both switch current on and off in a circuit.

In a power management circuit, the MOSFET can be used as a switch to control the amount of current flowing in the circuit. The PSMN2R0-30YL has a very low resistance of 0.2 microOhms at 10A, which means it is able to switch current at faster speeds, resulting in a decrease in power loss. The low turn-on threshold voltage also makes it suitable for use in low voltage devices.

Overall, the PSMN2R0-30YL is a single-channel n-channel MOSFET designed for power management applications. It has a low resistance and low turn-on threshold voltage, making it ideal for low power applications. This MOSFET is used in a variety of applications ranging from consumer electronics to industrial automation and control. It is able to switch current on and off at fast, source-synchronous speeds, resulting in a decrease in power loss.

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