| Allicdata Part #: | PSMN8R7-100YSFQ-ND |
| Manufacturer Part#: |
PSMN8R7-100YSFQ |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | PSMN8R7-100YSF/SOT669/LFPAK |
| More Detail: | |
| DataSheet: |  PSMN8R7-100YSFQ Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.43470 |
Specifications
| Series: | -- |
| Part Status: | Active |
Description
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PSMN8R7-100YSFQ application field and working principle
Static Field Effect Transistors (SFETs), or Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are types of semiconductor devices used to regulate electrical conduction in a circuit. Specifically, the PSMN8R7-100YSFQ is a MOSFET with a drain-source voltage rating of 100-V. As the voltage of the drain increases, the resistance decreases, allowing it to act as either an amplifier or a switch in a current or voltage circuit. As such, it has a wide array of uses in consumer, industrial, and military applications. This article will discuss the types of applications where the PSMN8R7-100YSFQ is used, as well as explain its working principle.
The PSMN8R7-100YSFQ is a versatile device that can be used in a variety of ways. Firstly, it can be used as a power switch in circuits, or for switching and controlling electrical current in consumer applications. It can also be used in motor control circuits, as well as communication and computer interface applications. Moreover, it is used in displays (including LED and LCD panels) and power supplies, as well as in various audio, video, and security systems. It has uses in both consumer electronics and industrial equipment as well.
The working principle of the PSMN8R7-100YSFQ is based on the phenomenon of the voltage-gate control. When the grid supplies a voltage to the transistor gate, the electrons in the transistor channel experience an electrochemical reaction and begin to move to the source terminal. This creates a current in the circuit and the current passes from drain to source, forming a conduction path. As the voltage on the gate is increased, the current flow increases, creating a larger amount of power delivered to the load.
In addition to being used for power switching and power amplification, the PSMN8R7-100YSFQ can also be used for signal processing or signal amplification in analog and digital signals. It is also used for distortion reduction and audio frequency regulation; it is often found in signal processing circuits in audio equipment, such as amplifiers and loudspeakers. When used in frequency regulation circuits, it can provide stability and accuracy to the signal, as well as reduce distortion. It also finds application in power electronics, as it is often used to regulate the power supply of a device.
Finally, the PSMN8R7-100YSFQ can also be used in military applications, to help protect circuits from damage during electrical surges or to allow for remote control of equipment. It is often used in electronic warfare and other active camouflage methods, as well as in communications and navigation equipment. It can also be used in nuclear power plants, as an additional safety measure.
To sum up, the PSMN8R7-100YSFQ is a versatile MOSFET with a drain-source voltage rating of 100-V. It can be used in a variety of applications, including power switching, motor control, audio and video systems, power supplies, display panels, and military applications. It works by regulating the current flow in a circuit based on the voltage level of the gate. Overall, the PSMN8R7-100YSFQ is a valuable device that can be used in many different applications.
The specific data is subject to PDF, and the above content is for reference
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