| Allicdata Part #: | 1727-6296-2-ND |
| Manufacturer Part#: |
PSMN130-200D,118 |
| Price: | $ 0.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 200V 20A DPAK |
| More Detail: | N-Channel 200V 20A (Tc) 150W (Tc) Surface Mount DP... |
| DataSheet: |  PSMN130-200D,118 Datasheet/PDF |
| Quantity: | 10000 |
| 2500 +: | $ 0.45644 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The PSMN130-200D,118 is a type of single MOSFET, also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This type of transistor has a variety of applications, including switching and power control, and is widely used in power electronics, computing, and communications applications.
The PSMN130-200D,118 is designed to provide excellent power on off-state performance. It has very low on-state resistance and low threshold voltage, making it especially suitable for switching high-voltage applications. The device also features a built-in protection diode, which reduces the need for additional external protection.
The PSMN130-200D,118 operates by controlling the flow of electrons between the source and the drain terminals, using an applied voltage across a metal-oxide-semiconductor (MOS) gate. When a positive voltage is applied to the gate, the conductive channel between the source and the drain is reduced, allowing the voltage to be precisely controlled.
The PSMN130-200D,118 MOSFET is widely used to control current and power in a variety of applications, including high-efficiency motor control, industrial control systems, servo drives and power modules. It can also be used in power switching, impedance matching, microwave ovens, and signal amplification.
The PSMN130-200D,118 MOSFET can also be used to provide over-current or over-voltage protection for sensitive electronic components. The device is well suited for use in a wide range of applications due to its low on-state resistance and low gate threshold voltage.
The PSMN130-200D,118 MOSFET is a versatile device that can be used in a variety of applications. Its low on-state resistance and low threshold voltage make it well suited for high-voltage applications, while its built-in protection diode simplifies the design of power conversion and power protection circuits.
The specific data is subject to PDF, and the above content is for reference
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