Allicdata Part #: | 568-6723-2-ND |
Manufacturer Part#: |
PSMN1R7-25YLC,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 25V 100A LFPAK |
More Detail: | N-Channel 25V 100A (Tc) 164W (Tc) Surface Mount LF... |
DataSheet: | PSMN1R7-25YLC,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 164W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3735pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN1R7-25YLC,115 is a Single N-Channel Enhancement Mode P-Channel Field Effect Transistor (FET). This particular field effect transistor is a very popular and widely used component, due to its versatile and reliable performance. In this article, we will discuss the application field of the PSMN1R7-25YLC,115 and look at its working principle.
Application
The PSMN1R7-25YLC,115 has a wide range of applications. It is primarily used as a switch in power control circuitry for communication control applications. It is also commonly used in pulse circuits and high-frequency power amplifiers as a switch as well. Due to its low power consumption, it is also suitable for small signal switching applications.
The PSMN1R7-25YLC,115 can be used as a power switch in circuits that require low power consumption, such as bridge rectifiers, synchro drivers, motor drivers, and other power controlling applications. It is also used in various levels of current amplification. The PSMN1R7-25YLC,115 can also be used for on/off switching of logic signals, as well as for level conversion.
Working Principle
The PSMN1R7-25YLC,115 FET is based on a unique design which allow electrons to flow in one direction only. This is known as an enhancement mode, or “normally-on” design. The basic design of the component allows electrons to be injected into the channel between the drain and the source terminal of the component. The gate terminal controls the electrons and allows them to either flow or be blocked, depending on the voltage applied. This is why it is also referred to as a voltage-controlled FET.
The drain and the source terminals of the component are connected to the power supply, while the gate terminal is connected to the control circuit. When a control signal is applied to the gate terminal, it will either attract or repel the electrons in the channel, allowing them to flow or be blocked, depending on the polarity of the signal. This makes the PSMN1R7-25YLC,115 an ideal choice for use in controlling electrical current, making it a versatile component for various applications.
Conclusion
The PSMN1R7-25YLC,115 is a Single N-Channel Enhancement Mode P-Channel Field Effect Transistor. It is a versatile and reliable component with a wide range of applications. Its unique design allows electrons to flow in one direction only, making it a great choice for power control and switching. Its low power requirements make it suitable for small signal switching applications as well.
The specific data is subject to PDF, and the above content is for reference
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