
Allicdata Part #: | 1727-5226-2-ND |
Manufacturer Part#: |
PSMN028-100YS,115 |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 42A LFPAK |
More Detail: | N-Channel 100V 42A (Tc) 89W (Tc) Surface Mount LFP... |
DataSheet: | ![]() |
Quantity: | 27000 |
1500 +: | $ 0.23242 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1634pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PSMN028-100YS,115 is a field-effect transistor (FET) type device and belongs to the single transistor category of MOSFETs. The device is comprised of three pins: the source, gate, and drain, which corresponds to the N-type MOSFET.
The main purpose of a MOSFET is to act as a switch or as an amplifier. It can be used as a voltage-controlled resistor, where the current is modified by changing the gate voltage applied on the FET.
PSMN028-100YS,115 is capable of providing excellent electrical conductivity with low on-resistance and fast switching performance at high temperatures. It is also highly reliable with excellent reliability and long-term stability. It is ideal for applications where robustness and fast performance is important such as automotive, communication systems, industrial applications, and consumer electronics.
The working principle of PSMN028-100YS,115 is based on the gate voltage applied on the FET. When the gate voltage is applied, a gate current flows and this current activates the gate region of the FET. Once the gate region is activated, it creates an electric field between the source and drain, allowing electrons to move from the source to the drain. By increasing or decreasing the voltage applied to the gate, the current flowing from the source to the drain can be increased or decreased.
PSMN028-100YS,115 can be used in a wide range of applications requiring low power consumption, fast switching, high frequency operation, and high temperature use. It is an ideal device for switching DC power, controlling relays, and producing pulse width modulation in motor control systems. It can be used in audio systems, security systems, power supplies, and other applications in the automotive and consumer industries. The device is well suited for applications requiring high efficiency and low power consumption. It is also useful in situation where switching speed and temperature stability is important.
In conclusion, PSMN028-100YS,115 is a valuable device for applications where high performance and reliability is needed. The device is highly efficient and provides excellent electrical conductivity at high temperatures. It is also capable of providing fast switching performance and stable performance with varied temperatures. It is an ideal device for a wide range of applications in the automotive, communication, industrial, and consumer industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PSMN012-100YS,115 | Nexperia USA... | 0.42 $ | 1000 | MOSFET N-CH 100V 60A LFPA... |
PSMN9R0-25MLC,115 | Nexperia USA... | 0.15 $ | 1500 | MOSFET N-CH 25V 55A LFPAK... |
PSMN075-100MSEX | Nexperia USA... | -- | 1000 | MOSFET N-CH 100V 18A LFPA... |
PSMN8R7-100YSFQ | Nexperia USA... | 0.48 $ | 1000 | PSMN8R7-100YSF/SOT669/LFP... |
PSMN1R1-25YLC,115 | Nexperia USA... | 0.46 $ | 7500 | MOSFET N-CH 25V 100A LFPA... |
PSMN028-100YS,115 | Nexperia USA... | 0.26 $ | 27000 | MOSFET N-CH 100V 42A LFPA... |
PSMN5R6-100YSFX | Nexperia USA... | 0.75 $ | 1000 | PSMN5R6-100YSF/SOT1023/4 ... |
PSMN8R0-80YLX | Nexperia USA... | 0.36 $ | 1000 | MOSFET N-CH 80V 100A LFPA... |
PSMN2R0-30YL,115 | Nexperia USA... | 0.32 $ | 6000 | MOSFET N-CH 30V 100A LFPA... |
PSMN9R8-30MLC,115 | Nexperia USA... | 0.15 $ | 1000 | MOSFET N-CH 30V 50A LFPAK... |
PSMN2R7-30PL,127 | Nexperia USA... | 1.16 $ | 381 | MOSFET N-CH 30V TO220ABN-... |
PSMN2R1-60CSJ | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 60V D2PAKMOSF... |
PSMN3R9-60PSQ | Nexperia USA... | 1.74 $ | 4986 | MOSFET N-CH 60V SOT78N-Ch... |
PSMN1R6-30PL,127 | Nexperia USA... | 2.31 $ | 4452 | MOSFET N-CH 30V 100A TO22... |
PSMN030-60YS,115 | Nexperia USA... | 0.15 $ | 39000 | MOSFET N-CH 60V 29A LFPAK... |
PSMN016-100PS,127 | Nexperia USA... | 0.78 $ | 2570 | MOSFET N-CH 100V TO220ABN... |
PSMN5R6-60YLX | Nexperia USA... | 0.29 $ | 1000 | MOSFET N-CH 60V LFPAK56N-... |
PSMN3R0-60ES,127 | Nexperia USA... | 1.71 $ | 4539 | MOSFET N-CH 60V 100A I2PA... |
PSMN022-30BL,118 | Nexperia USA... | 0.3 $ | 1000 | MOSFET N-CH 30V 30A D2PAK... |
PSMN025-80YLX | Nexperia USA... | 0.19 $ | 7500 | MOSFET N-CH 60V LFPAK56N-... |
PSMN130-200D,118 | Nexperia USA... | 0.5 $ | 10000 | MOSFET N-CH 200V 20A DPAK... |
PSMN1R3-30YL,115 | Nexperia USA... | 0.54 $ | 1000 | MOSFET N-CH 30V 100A LFPA... |
PSMN8R0-30YL,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 62A LFPAK... |
PSMN1R6-30BL,118 | Nexperia USA... | 0.83 $ | 4000 | MOSFET N-CH 30V 100A D2PA... |
PSMN6R5-80BS,118 | Nexperia USA... | 0.73 $ | 1000 | MOSFET N-CH 80V 100A D2PA... |
PSMN070-200B,118 | Nexperia USA... | 1.2 $ | 800 | MOSFET N-CH 200V 35A D2PA... |
PSMN057-200B,118 | Nexperia USA... | 0.76 $ | 4000 | MOSFET N-CH 200V 39A D2PA... |
PSMN027-100BS,118 | Nexperia USA... | 0.43 $ | 5600 | MOSFET N-CH 100V 37A D2PA... |
PSMN5R0-100ES,127 | Nexperia USA... | 2.55 $ | 2966 | MOSFET N-CH 100V 120A I2P... |
PSMN1R7-60BS,118 | Nexperia USA... | 1.2 $ | 1000 | MOSFET N-CH 60V 120A D2PA... |
PSMN1R7-25YLC,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 25V 100A LFPA... |
PSMN8R9-100BSEJ | Nexperia USA... | 0.95 $ | 1000 | PSMN8R9-100BSE/SOT404/D2P... |
PSMN3R3-80ES,127 | Nexperia USA... | 1.34 $ | 1000 | MOSFET N-CH 80V 120A I2PA... |
PSMN039-100YS,115 | Nexperia USA... | 0.2 $ | 159000 | MOSFET N-CH LFPAKN-Channe... |
PSMN3R5-25MLDX | Nexperia USA... | 0.21 $ | 1000 | PSMN3R5-25MLD/MLFPAK/REEL... |
PSMN4R8-100BSEJ | Nexperia USA... | -- | 7200 | MOSFET N-CH 100V D2PAKN-C... |
PSMN016-100YS,115 | Nexperia USA... | 0.29 $ | 1000 | MOSFET N-CH LFPAKN-Channe... |
PSMN015-100B,118 | Nexperia USA... | 0.84 $ | 5600 | MOSFET N-CH 100V 75A D2PA... |
PSMN013-60YLX | Nexperia USA... | 0.22 $ | 1000 | MOSFET N-CH 60V LFPAK56N-... |
PSMN8R5-100ESQ | Nexperia USA... | 1.32 $ | 5126 | MOSFET N-CH 100V 100A I2P... |
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