PSMN028-100YS,115 Allicdata Electronics
Allicdata Part #:

1727-5226-2-ND

Manufacturer Part#:

PSMN028-100YS,115

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 42A LFPAK
More Detail: N-Channel 100V 42A (Tc) 89W (Tc) Surface Mount LFP...
DataSheet: PSMN028-100YS,115 datasheetPSMN028-100YS,115 Datasheet/PDF
Quantity: 27000
1500 +: $ 0.23242
Stock 27000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1634pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PSMN028-100YS,115 is a field-effect transistor (FET) type device and belongs to the single transistor category of MOSFETs. The device is comprised of three pins: the source, gate, and drain, which corresponds to the N-type MOSFET.

The main purpose of a MOSFET is to act as a switch or as an amplifier. It can be used as a voltage-controlled resistor, where the current is modified by changing the gate voltage applied on the FET.

PSMN028-100YS,115 is capable of providing excellent electrical conductivity with low on-resistance and fast switching performance at high temperatures. It is also highly reliable with excellent reliability and long-term stability. It is ideal for applications where robustness and fast performance is important such as automotive, communication systems, industrial applications, and consumer electronics.

The working principle of PSMN028-100YS,115 is based on the gate voltage applied on the FET. When the gate voltage is applied, a gate current flows and this current activates the gate region of the FET. Once the gate region is activated, it creates an electric field between the source and drain, allowing electrons to move from the source to the drain. By increasing or decreasing the voltage applied to the gate, the current flowing from the source to the drain can be increased or decreased.

PSMN028-100YS,115 can be used in a wide range of applications requiring low power consumption, fast switching, high frequency operation, and high temperature use. It is an ideal device for switching DC power, controlling relays, and producing pulse width modulation in motor control systems. It can be used in audio systems, security systems, power supplies, and other applications in the automotive and consumer industries. The device is well suited for applications requiring high efficiency and low power consumption. It is also useful in situation where switching speed and temperature stability is important.

In conclusion, PSMN028-100YS,115 is a valuable device for applications where high performance and reliability is needed. The device is highly efficient and provides excellent electrical conductivity at high temperatures. It is also capable of providing fast switching performance and stable performance with varied temperatures. It is an ideal device for a wide range of applications in the automotive, communication, industrial, and consumer industries.

The specific data is subject to PDF, and the above content is for reference

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