Allicdata Part #: | 1727-2594-2-ND |
Manufacturer Part#: |
PSMN025-80YLX |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V LFPAK56 |
More Detail: | N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN025-80YLX Datasheet/PDF |
Quantity: | 7500 |
1500 +: | $ 0.17280 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2703pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN025-80YLX mass production of N-Channel Trench MOSFET. It is made of high-speed switching silicon and is designed for applications in power management circuits and power switch / relay control. This component is suited for devices that operate in the DC to 100 kHz range in switching and low-saving power control applications.
Application field
PSMN025-80YLX can be used in wide variety of applications:
- DC/DC Converter Switching Regulators
- High Efficiency AC/DC Switching Power Supplies
- Low-Voltage Motor Control and Switching Applications
- DC Motor Control and Speed Control Circuits
- Multipoint Control interface and Pre-Control Circuits
- Switching and Control Circuits in Low Power Electronics
- Switching and Control Circuits in Home Appliances
- Switch Mode Power Supplies (SMPS)
Working principle
PSMN025-80YLX utilizes a simplified FET structure known as a trench MOSFET. This device has a greatly reduced number of transistors compared to a standard MOSFET, resulting in a lower on-resistance, higher switching speed and better power efficiency. These characteristics enable it to be used for high speed switched mode power supplies, inverters, and motor control.
Trench MOSFETs rely on a two-dimensional P-channel body that is formed in the gate terminal, providing the bulk of the device\'s low-power efficiency and leading to a low R DSON (on resistance). A buffer gate-connection complements the P-channel body, offering increased current handling capabilities, enabling higher power handling and higher speed switching.
The silicon substrate used in PSMN025-80YLX is designed with a special process technology that provides high frequency switching and high efficiency in DC to 100 kHz range power control applications. Its repetitive surge capability makes it well suited for applications that have high peak current requirements, such as motor control and switching power supplies.
Additionally, the component features integrated ESD diodes that protect against electrostatic discharge. The device offers a low output capacitance and a low source-drain capacitance for improved noise immunity. The PSMN025-80YLX also features a wide operating temperature range of -55°C to +150°C.
Conclusion
PSMN025-80YLX is designed for specific applications in power management and power device control. It offers high efficiency, low R DSON, and high switching speed. Additionally, integrated ESD diodes ensure increased reliability and safety, while the extended temperature range makes it suitable for a range of applications. With its unique design and operation, the PSMN025-80YLX is ideal for a variety of DC to 100 kHz switching and low-power control applications.
The specific data is subject to PDF, and the above content is for reference
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