Allicdata Part #: | 1727-7145-2-ND |
Manufacturer Part#: |
PSMN9R0-25MLC,115 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 25V 55A LFPAK33 |
More Detail: | N-Channel 25V 55A (Tc) 45W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN9R0-25MLC,115 Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.14164 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.65 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 705pF @ 12.5V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK33 |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
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The PSMN9R0-25MLC,115 is a type of Field Effect Transistor (FET). FETs are a type of electronic switch, and are commonly used in various applications including amplification, rectification and switching. This particular type of FET is a MOSFET (Metal Oxide Semiconductor FET). MOSFETs are ideal for high-frequency switching and amplification as they have very low gate capacitance. This particular model is a single-type, which is used in signal conditioning and many other applications.
To understand how PSMN9R0-25MLC,115 works, it is important to understand the basics of how transistors work. A transistor is an electronic three-terminal device that controls the flow of electrons. It is made up of two p-type and one n-type semiconductor material. The terminal that is connected to the p-type material is called the collector, the terminal connected to the n-type material is called the emitter, and the terminal that is connected between the two is called the base. When the base terminal is provided with a voltage from a voltage source, the electrons from the collector move through the base and into the emitter.
The operation of MOSFETs such as the PSMN9R0-25MLC,115 is a bit different from the standard bipolar transistors discussed above. MOSFETs do not require a current flow through the base terminal to be activated. Instead, they are controlled by an electrical field generated when a voltage is applied to the gate terminal. This voltage causes a change in the electric field of the MOSFET, thus allowing a current flow between the source and drain terminals. This voltage-controlled method makes MOSFETs well suited for use in high-frequency applications.
The PSMN9R0-25MLC,115 MOSFET has many applications. It can be used in signal-conditioning or digital logic operations. It is also ideal for use in power regulators, amplifiers, inverters, and motor controllers. It can be used to switch or control the on/off state of a circuit, allowing it to move from one state to another in response to a given input signal. This makes the MOSFET well suited for many types of automation tasks. It can also be used as an attenuator in audio circuits, as it can reduce the signal strength without distorting the signal. The PSMN9R0-25MLC,115 is also extremely efficient in terms of power consumption, which makes it perfect for battery-powered devices.
In conclusion, the PSMN9R0-25MLC,115 MOSFET is a versatile and highly efficient single-type FET. It is well suited for high-frequency applications, and can be used for many tasks including signal-conditioning, digital logic operations, power regulation, motor-controllers, and audio attenuation. It is also very efficient in terms of power consumption, making it perfect for battery-powered devices.
The specific data is subject to PDF, and the above content is for reference
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