PSMN5R0-100ES,127

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	338W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9900pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The PSMN5R0-100ES is a single-pole, high-performance power MOSFET (metal oxide semiconductor field-effect transistor) that offers efficient and reliable switching for a variety of applications. This N-channel device has a drain current of 100 amps, a drain-source voltage of 60 volts, and a on-resistance of about 0.17 ohms. It is designed for applications where high efficiency, low noise, and long life are required.The PSMN5R0-100ES is a single metal oxide semiconductor field-effect transistor (MOSFET) which is capable of passing current in one direction. The MOSFET works by using an electric field just like other types of FETs, however, it uses a metal-oxide insulator between the gate and the source/drain structure of the transistor to achieve the desired effect. This type of FET is known for its incredibly low on-resistance, which allows for a greater amount of current to pass through the device, and also for its high switching performance with minimal power loss. The PSMN5R0-100ES is designed for applications in medium and high voltage switching, motor control and power conversion. Its low on-resistance surface allows for higher efficiency in motor control and power conversion applications as a result of reduced heat dissipation. This MOSFET also has zero gate charge, which allows for faster switching speeds, perfect for high-speed applications. Its low gate charge also reduces gate ringing and overshoot, which can cause damage to the gate structure of the transistor. The low gate capacitance of this MOSFET is also up to 10x higher than other MOSFETs, allowing for more efficient and quicker switching times.The working principle of PSMN5R0-100ES is based on the “source – drain” structure of a MOSFET. The so called “source” is where the electricity enters the MOSFET and makes contact with its two terminals, the “drain” where the electricity leaves the device, and the “gate” connected to these two. When a voltage is applied to the gate, a field effect is created and the extent of the field can be controlled by adjusting the gate voltage. This field is able to control the current flow between the source and the drain and thus regulates the power that goes through the MOSFET. The highly advantageous traits of the PSMN5R0-100ES such as its low on-resistance, low gate charge, and zero gate capacitance make it a cost-effective solution to various power control applications. The device is suitable for medium and high voltage switching, motor control, high-speed applications and more. It is important to note that the PSMN5R0-100ES has a drain-source voltage rating of 60 V and a maximum drain current of 100 A. Additionally, the MOSFET has a minimum of 100 mΩ at 25 °C and is optimized for operation over a temperature range of -55 °C to 175 °C. Therefore, it is important to adhere to these ratings to prevent any damage to the MOSFET. In conclusion, the PSMN5R0-100ES is an excellent single-pole power MOSFET for efficient and reliable switching. Its low on-resistance, low gate charge, and zero gate capacitance make it an ideal choice for a variety of applications from medium and high voltage switching, to motor control. Users of the PSMN5R0-100ES must adhere to its ratings of a drain-source voltage of 60 V and a maximum drain current of 100 A.

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