Allicdata Part #: | 1727-1054-ND |
Manufacturer Part#: |
PSMN8R5-100ESQ |
Price: | $ 1.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 100A I2PAK |
More Detail: | N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2... |
DataSheet: | PSMN8R5-100ESQ Datasheet/PDF |
Quantity: | 5126 |
1 +: | $ 1.19070 |
50 +: | $ 0.96037 |
100 +: | $ 0.86436 |
500 +: | $ 0.67229 |
1000 +: | $ 0.55704 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 263W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5512pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 111nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tj) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PSMN8R5-100ESQ is a MOSFET (metal oxide semiconductor field effect transistor) N-channel enhancement type of a single model. It is specially designed for power switching applications and a wide range of low-to-medium frequencies up to 100V with a current rating of 8A. The device is mainly used in the power switching market, including automotive, industrial and consumer applications.
In terms of application fields, the device can be used in motor controllers, DC-DC converters, solar micro-inverters, charger/DC-DC converters, and general safety power switch designs. It can also be used in automotive lighting, motor start-up, and current limiting applications. The device is designed to offer low on-resistance and low gate charge, and can operate from -55°C to 150°C.
The device is made up of an insulated-gate field effect transistor with an associated external gate bias resistor that is connected to the gate terminal of the device. The body of the MOSFET is composed of a semiconductor material, and there are two electrically isolated N-channel regions. The source and drain terminals are located on the channel regions, while the gate terminal is located on the top surface of the MOSFET.
The working principle of the device is based on the principle of modulation of the electric field in MOSFETs. The device uses the electric field to cause electrons to flow through the channel that is formed by the two N-channel regions. When a bias voltage is applied to the gate terminal, the electric field distribution in the channel is modified and the flow of electrons between the source and drain terminals is regulated. The amount of current that is allowed to flow through the channels is determined by the amount of voltage applied to the gate as well as the resistance of the device.
The PSMN8R5-100ESQ is a reliable, low-cost device that is used for power switching applications. The device is suitable for applications where low on-resistance and low gate charge are important factors. The device is designed to operate from -55°C to 150°C and its range of applications makes it suitable for automotive, industrial, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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