PSMN2R7-30PL,127

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The PSMN2R7-30PL,127 is a single N-channel power MOSFET in an enhanced Power SO-8 with a maximum drain source voltage of 30V. It\'s part of a range of N-channel Power MOSFETs from NXP with a low on-resistance and a wide range of gate charge and drain current. The device can be used for a variety of applications ranging from power management, DC to DC conversion and switched mode power supplies.

The PSMN2R7-30PL,127 is suitable for design applications that require a small but efficient device, as it is widely used in automotive, industrial and consumer applications, including motor drives, power management, DC to DC conversion and switched mode power supplies.

The PSMN2R7-30PL,127 has an enhanced body-diode reverse recovery time, high power efficiency and fast switching speed that suit high performance applications. The device is also highly reliable due to its very low gate charge, good power dissipation and fault protection features.

The on-state resistance of the PSMN2R7-30PL,127 is typically 368 ohms for a 25V Vgs and 5.6 Amp drain current. Its breakdown voltage, also known as the punch-through voltage, is typically 33V. The device has a total gate charge of 6.7nC and a total gate-source charge of 4.4nC. The total gate to source capacitance of the device is typically 6.3pF.

The working principle of the device is that when an electric field is applied to a semiconductor material, electrons within the material are forced to move from their original position and are attracted to the electric field. The PSMN2R7-30PL,127 is a metal oxide semiconductor field effect transistor (MOSFET) which employs this effect. The electric field is applied to the gate of the MOSFET and causes the channel between the source and drain to change its resistance, modulating the flow of electrons and creating an output.

The device is capable of blocking voltages in both directions, making it a better choice for many applications. It is also able to switch quickly and provide voltage regulation with its low RDSon resistive behaviour. It is commonly used in applications where space and energy efficiency is a must as it is small in size and provides excellent power efficiency with low power losses.

In conclusion, the PSMN2R7-30PL,127 is a single N-channel power MOSFET designed for a variety of applications such as motor drives, DC/DC converters, and power management as it has an enhanced body-diode reverse recovery time and high power efficiency with fast switching speed. Furthermore, its low on-state resistance, low gate charge, good power dissipation, and fault protection features make it a highly reliable choice for a range of applications.

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