Allicdata Part #: | 1727-7117-2-ND |
Manufacturer Part#: |
PSMN022-30BL,118 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 30A D2PAK |
More Detail: | N-Channel 30V 30A (Tc) 41W (Tc) Surface Mount D2PA... |
DataSheet: | PSMN022-30BL,118 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.27716 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 447pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 22.6 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN022-30BL,118 is a N-channel enhancement mode power metal-oxide-semiconductor field-effect transistor (MOSFET). This MOSFET is used in a variety of electronic devices, including motor drivers, switches, and amplifiers, as well as in converters and processors with high switching speeds. It is particularly popular in the automotive and lighting industries. The device is designed to handle moderate to high current loads with a maximum drain-source voltage of 40V. Additionally, this semiconductor has a drain-source on-resistance of 9.7 mΩ at VGS = 10V, and a gate charge that is lower than other parts in its class. The PSMN022-30BL,118 MOSFET is designed to use a voltage on the gate to change its conductivity from low to high. This means when a low gate-source voltage is applied, the transistor remains in the cut-off channel. When a larger gate-source voltage is applied, it creates an inversion channel, which allows current to flow from the source to the drain. This type of FET is classified as an enhancement-mode MOSFET, where the device is normally off until the gate voltage is applied.The PSMN022-30BL,118 is typically used in applications that require high switching speed like motor drivers, amplifiers and switches. The low on-resistance, gate charge and low gate-source voltage make the device suitable for applications that involve high peak currents. The device is particularly popular for applications requiring low noise and low turn-on time. The PSMN022-30BL,118 is also ideal for use in power converters as it offers better efficiency and higher peak power, as compared to other types of MOSFETs. This device can be used to create an AC-DC or DC-DC converter where one side of the power circuit is driven by an AC wave and the other side is driven by a DC wave. The PSMN022-30BL,118 can also be used for the induction heating of liquids and other materials, by passing current through an electrically conductive material. The PSMN022-30BL,118 MOSFET can also be used in audio amplifiers, where it offers high efficiency, low noise and low thermal dissipation. This device can be used in combination with audio power amplifiers, since its low on-resistance helps to reduce power losses associated to transformer loading. Additionally, the PSMN022-30BL,118 is used in the production of integrated circuits, where it can be used to control the flow of electrons from a single power source. Overall, the PSMN022-30BL,118 is a high-performance semiconductor device, with low on-resistance and low gate-source voltage. This makes it well suited for applications that require high switching speeds and low power losses. In addition, this MOSFET is suitable for audio amplifiers and the production of integrated circuits. As such, the device is an important component in a variety of electronic devices, providing users with reliable operation, low noise and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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