PSMN3R5-25MLDX

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The PSMN3R5-25MLDX is a single N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). These transistors are some of the most commonly used and versatile switching devices available due to their numerous features and abilities, one of which is their high input impedance. The PSMN3R5-25MLDX is a general-purpose device, usually used in logic level applications. This particular type of transistor is often used in low voltage and low power applications.

The PSMN3R5-25MLDX features a drain source voltage rating of 25V and its current rating is 190mA to operate efficiently. Along with this, its power dissipation is 90mW and RDS(on) is 3.5 ohms. Its gate-threshold voltage is -1.6V and the body diode is available with a forward voltage of 0.6V. This makes the device suitable for low voltage and low power applications like cellular phones and other portable electronic devices. It also has a very low input capacitance, which makes it well suited for power-saving applications.

The primary application field for the PSMN3R5-25MLDX is in telecommunications and other low power radio frequency applications. It is also often used in industrial and automotive applications, such as motor drivers, solenoid and relay drivers, as well as other general purpose applications. It is also commonly used in control circuits and switching power supplies. Additionally, it can be used in applications requiring a large amount of power, as it can handle up to 90mW.

The working principle of the PSMN3R5-25MLDX is similar to other MOSFETs. It is a voltage-controlled device, which means that the current that flows through its drain source channel can be controlled by applying a voltage to its gate region. When a voltage is applied to the gate of the MOSFET, it creates an electric field which attracts the electrons from the body of the MOSFET to the gate, thus allowing the current to flow from the drain to the source. It is also a capacitive device, which means that it has an input capacitance which is controlled by the externally applied gate voltage. This helps to reduce unwanted noise and interference.

The PSMN3R5-25MLDX is a low voltage MOSFET used for many applications due to its numerous features. Its low drain source voltage rating of 25V makes it suitable for low voltage and low power applications, while its low power dissipation of 90mW makes it suitable for applications requiring a large amount of power. It also has a low input capacitance, which helps to reduce unwanted noise and interference. Finally, it is a voltage-controlled device, and its gate-threshold voltage of -1.6V makes it ideal for a wide range of industrial and automotive applications.

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