| Allicdata Part #: | 1727-4774-2-ND |
| Manufacturer Part#: |
PSMN057-200B,118 |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 200V 39A D2PAK |
| More Detail: | N-Channel 200V 39A (Tc) 250W (Tc) Surface Mount D2... |
| DataSheet: |  PSMN057-200B,118 Datasheet/PDF |
| Quantity: | 4000 |
| 800 +: | $ 0.68546 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 57 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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PSMN057-200B118 is a single N-Channel MOSFETs, which is a type of transistor device. MOSFETs are devices used to control surge currents and to enable and disable circuits. The PSMN057-200B118 is designed to offer efficient switching and protection against over current, over voltage and over heat conditions in power supplies, automotive, industrial and consumer electronic applications. The PSMN057-200B118 has a maximum drain-source voltage of 200V with an on-state resistance of 0.8V.This MOSFET also features a low threshold voltage, providing greater flexibility in circuit design and power supplies, while also providing improved efficiency over standard MOSFETs. The PSMN057-200B118 also offers precision and cost-effectiveness, with adjustable operating resistance and excellent thermal performance.The PSMN057-200B118 is a voltage driven N-Channel MOSFET, meaning the drain-source current and channel resistance is controlled by a voltage applied to a three-terminal gate-source junction. This particular MOSFET has a breakdown voltage of 5V, making it suitable for use in low voltage circuits.The PSMN057-200B118 also offers superior thermal resistance and superior switching characteristics (compared to standard MOSFETs). The device features unique process technology that improves reliability, reduces power consumption and increases system efficiency.In terms of application field, the PSMN057-200B118 can be used in any circuit that requires high surge current or low voltage operation. It can be used in automotive systems and power supplies, industrial automation, and consumer electronic applications. Its wide operating range and high switching capability makes it suitable for a wide range of applications.In addition, the PSMN057-200B118 can be used in motion control applications where it can provide protection from over current, over voltage and over heat. The device can also be used in high-end audio applications where it can enable and disable circuits as required.The PSMN057-200B118 is also suitable for use in motor control applications as it can provide improved motor efficiency and greater motor stability. It is also suitable for use in LED lighting applications, where it can offer increased system efficiency and smooth, high-quality lighting.To sum up, the PSMN057-200B118 is a single N-Channel MOSFET, which provides superior switching and protection against over current, over voltage, and over heat conditions. Its unique process technology offers improved reliability, reduced power consumption, and increased system efficiency. The device is suitable for use in automotive, industrial automation, consumer electronic, and LED lighting applications, as it can provide improved motor efficiency and system stability.
The specific data is subject to PDF, and the above content is for reference
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