PSMN9R8-30MLC,115

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The PSMN9R8-30MLC,115 is a single N-channel enhancement-mode stainless-gate Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from NXP Semiconductors. It has a drain current of 78A, power dissipation of 130W and drain-source voltage of 125V/60V. It has a wide range of operating temperature from -55°C to 175°C and its frequency range is from 0.25MHz to 5MHz. It is suitable for applications where high switching speed and high voltage performance are required such as in synchronous rectifiers, motor control and other aviation and industrial applications.

The PSMN9R8-30MLC,115 MOSFET has many features that make it an attractive choice for many applications including its low on-resistance, high junction temperature range and high operating frequency as mentioned earlier. It also offers a high-level of efficiency due to its low gate-source capacitance and low gate charge. Furthermore, it features very low gate turn-on and turn-off losses which makes it suitable for use in high-frequency switching battery management systems and switching power supplies. Furthermore, the PSMN9R8-30MLC,115 utilizes the latest advanced process technology for improved long-term stability for traditional and multi-processor applications.

Application Field

The PSMN9R8-30MLC,115 MOSFET can be used in a variety of applications from consumer electronics to industrial applications. Its low on-resistance, high junction temperature range and high operating frequency make it a perfect choice for many power switching applications such as synchronous rectifiers, motor control and other aviation and industrial applications. Its wide-range of operating temperature, low gate-source capacitance, and low gate charge makes it suitable for use in high efficiency, high frequency switching applications such as battery management systems and switching power supplies. Furthermore, its high level of efficiency can also be utilized in audio designs and consumer audio applications.

Working Principle

The PSMN9R8-30MLC,115 MOSFET works on the principle of electrostatic induction to control the flow of current through the device. When a voltage is applied to the gate terminal of the MOSFET, it induces a charge on the channel of the MOSFET. This charge creates a channel between the source and the drain, allowing current to flow between the two terminals. By adjusting the voltage applied to the gate, the amount of current allowed to pass between the source and the drain can be controlled.

The MOSFET also has two additional terminals—the V_DS and V_GSOD —which control the on-state and off-state drain-source voltage, respectively. The V_DS is usually biased to the supply voltage while the V_GS is set to a negative voltage. This enables a high-drain current and low on-resistance. The low on-resistance is the main feature of the PSMN9R8-30MLC,115 MOSFET, allowing higher switching speed and voltage performance. Furthermore, the low gate charge of the MOSFET provides higher switching efficiency for battery management systems and switching power supplies.

In conclusion, the PSMN9R8-30MLC,115 is a single N-channel metal-oxide semiconductor field effect transistor. It is suitable for power switching applications such as synchronous rectifiers and motor controlling applications. With its low on-resistance, high junction temperature range, high operating frequency and low gate charge, it is an excellent choice for high-efficiency, high-frequency switching applications such as battery management systems and switching power supplies. Finally, its features make it suitable for use in many other applications such as audio designs, consumer electronics, and industrial applications.

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