| Allicdata Part #: | 1727-4775-2-ND |
| Manufacturer Part#: |
PSMN070-200B,118 |
| Price: | $ 1.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 200V 35A D2PAK |
| More Detail: | N-Channel 200V 35A (Tc) 250W (Tc) Surface Mount D2... |
| DataSheet: |  PSMN070-200B,118 Datasheet/PDF |
| Quantity: | 800 |
| 800 +: | $ 1.09893 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4570pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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PSMN070-200B,118 Application Field and Working Principle
The PSMN070-200B,118 is a single N-channel enhancement-mode MOSFET transistor. It is suitable for low-noise and high-frequency switching applications in the mid-power range. In order to achieve single N-channel enhancement-mode operation, a high-value gate-to-source voltage is applied across the device. The PSMN070-200B,118 features an internal drain-to-source diode for circuit protection.The PSMN070-200B,118 is designed for use in power supplies, drivers, converters, current-limiting circuits and other applications where high-frequency operation is required. The device operates in both low-voltage and high-voltage modes and can be used in medium-power systems.When the gate of the PSMN070-200B,118 is subject to a positive voltage, a small fraction of the voltage is applied to the channel, causing electrons to be attracted to the channel and producing an inversion layer at the surface of the channel. This inversion layer forms the channel for current flow between the drain and the source of the device. By adjusting the voltage applied to the gate, the device can be operated at varying current levels.The PSMN070-200B,118 is capable of operating at frequencies up to 1 MHz and can handle up to 200V of drain-to-source voltage. The maximum rated drain current of the device is 20A. The device features an exceptionally low on-resistance and an extremely low output capacitance. The device is also capable of operating over a wide temperature range of -55 to +150°C.The PSMN070-200B,118 is a reliable and efficient transistor for high-frequency switch applications. With a high-power rating, low gate capacitance, and wide temperature range, it is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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