PSMN016-100YS,115

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	117W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2744pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	16.3 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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h2 style="text-align:center;">Application Field and Working Principle of PSMN016-100YS,115 Transistor (FETs, MOSFETs - Single)/h2>The PSMN016-100YS,115 transistor is a product of NXP Semiconductor and it is a basic type of transistor suitable for a variety of power applications. This device belongs to the family of field effect transistors, and particularly the single type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).Whenever it is necessary to control a continuous and large amount of electrical current or voltage, this type of transistor is usually used as device. It efficiently switches on/off an electrical circuit to control current or voltage according to the changing conditions. Consequently, due to its power handling capabilities, it is suitable for wide range of applications, such as audio amplifiers, voltage regulators, inverters, motor control circuitries and radio-frequency applications. In most designs, the PSMN016-100YS,115 transistor is placed between the control and the loads. Its gate is connected to a signal voltage source that determines the amount of current flowing through the device. Usually, the signal source should be above 5V or -5V and a very small electric current (1µA to 10µA) is sent to the gate of the transistor through a resistor. Thus, this voltage levels modifies the shape of a channel that is connected between the source and the drain terminals according to the principle of operation of FETs, MOSFETs. The general physical and electrical structure of the PSMN016-100YS,115 transistor is illustrated in Figure 1. As it can be seen in this figure, the MOSFET is constructed using four sections, which are the Source (S), Drain (D), Gate (G) and Body or Substrate (B). The gate section is covered by a dielectric oxide material while the body terminal is connected to the bulk of the substrate. This layout together with the deposit of a gate material produces an electric field which modulates the current flow through the device.h3>Figure 1 (MOSFET Structure) /h3>In normal working condition, the electric potential existing between the gate and the body sections of the PSMN016-100YS,115 leads to the formation of a depletion zone that causes a variation of the current flowing from the source to the drain. The Size of the electric field produced by the voltage difference depends on the type of terminal connected to the substrate and the gate material. Gradually, this potential increases, leading to an enhancement of the electric field and a decrease of the electric charge that constitutes the drain region. When the gate voltage is high, a larger electric field is formed and a major portion of the depletion zone is formed. As a consequence, the current flowing through the device decreases due to an increase of the electric charge between source and drain. The opposite phenomenon occurs when the gate voltage is low, a smaller electric field is produced and the depletion zone is minimized resulting in an increase of the drain to source current. Therefore, the electric current flowing through the PSMN016-100YS,115 transistor is constantly modified by the control voltage applied to the gate section. Consequently, this device works as a switch whose behaviour of current conduction or suppression depends on this electric control signal. In short, the PSMN016-100YS,115 transistor is a wide range of power handling capability suitable for high current switching operations. It is constructed as a MOSFET, so the variation of current flow is mainly modulated by the electric potential existing between the gate and the body. This transistor is strongly recommended in audio amplifier, voltage regulator, inverter, motor control circuitries and radio-frequency applications, since it is responsive to small and low cost electric signals. In all cases, it is recommended to read the datasheet before using this device.

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