PSMN009-100P,127 Allicdata Electronics
Allicdata Part #:

1727-4653-ND

Manufacturer Part#:

PSMN009-100P,127

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 75A TO220AB
More Detail: N-Channel 100V 75A (Tc) 230W (Tc) Through Hole TO-...
DataSheet: PSMN009-100P,127 datasheetPSMN009-100P,127 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.84767
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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PSMN009-100P,127 is a type of single-channel enhancement-mode MOSFET that can be used for various kinds of applications. It is a three terminal device (gate, drain, and source) which consists of N-Channel MOSFET, a velocity-controlled insulated gate and a capacitor that provide the low-frequency negative feedback control for the device. This combination provides fast switching speed, low-resistance drain paths, low noise, high-power efficiency. This device also can be used in switching converter applications such as boost, buck, and flyback converters.

The working principle of PSMN009-100P,127 is shaped by how the gate, drain and source terminals interact with the MOSFET. The gate terminal acts by creating a barrier that can either allow or block current from flowing between the drain and the source. When a gate voltage (V_GS) higher than the threshold voltage (V_th) is applied, the MOSFET is considered to be ‘on’ and current can flow between the drain and source. When V_GS is lower than V_th, the MOSFET is considered to be ‘off’ and current cannot flow. This also applies when an electrical signal passes between the gate and source terminals.

The PSMN009-100P,127 is mainly used in applications where low-noise and low-resistance drain paths are required. In audio amplifier circuits and LED drivers, it can be used as a switch to efficiently control the voltage supplied to the drain. Its low-resistance feature also makes it ideal for switching DC-DC converters, where power efficiency and fast speed of switching are critical. Additionally, the low-resistance characteristic of the device allows it to be used in circuitry where high-frequency noise is generated. Finally, the PSMN009-100P,127 can be used in AC-DC conversion, providing low-noise and high-efficiency

In summary, the PSMN009-100P,127 is a single-channel enhancement-mode MOSFET that can be used in a variety of applications such as audio amplifiers, LED drivers, DC-DC converters, AC-DC conversion, and other circuits where low-noise and high-efficiency are desired. Its combination of fast switching speed, low-resistance drain paths, low noise and high power efficiency makes it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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