PSMN017-30BL,118 Allicdata Electronics
Allicdata Part #:

1727-7128-2-ND

Manufacturer Part#:

PSMN017-30BL,118

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 32A D2PAK
More Detail: N-Channel 30V 32A (Tc) 47W (Tc) Surface Mount D2PA...
DataSheet: PSMN017-30BL,118 datasheetPSMN017-30BL,118 Datasheet/PDF
Quantity: 1600
800 +: $ 0.30728
Stock 1600Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 47W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN017-30BL,118 is a N-Channel PowerTrench MOSFET. It is ideal for use in a broad range of applications. This component is often used in modern applications due to its low power consumption, low on-resistance, fast switching, and high current-handling capabilities. The device is designed to switch load currents up to 27A and is available in a single package.

The PSMN017-30BL,118 features an advanced device structure that utilizes an optimized N-Channel MOSFET with a fully symmetrical body, low Qg, and low gate charge. This MOSFET also features a built-in body diode for improved body diode switching capability. This component is available in a PQFN-30 package, which is ideal for thermally demanding applications.

This component is used in a wide variety of applications, including general-purpose switching, SoC/ASICs, servers, power management, and power conversion applications. This component can also be used in data centers, telecom systems, and industrial automation applications. This component is designed to operate at high frequencies and is capable of handling high-power dissipation.

The working principle of the PSMN017-30BL,118 is based on the fact that when a voltage is applied to the gate of the MOSFET, it creates an electric field which repels holes and attacts electrons. This causes electrons to be channeled through the source and drain regions which causes the MOSFET to turn on. When the voltage is removed, the electrons are repelled away from the drain and the MOSFET turns off. This component is capable of switching currents of up to 27A and it can operate at frequencies of up to 150MHz.

The PSMN017-30BL,118 is a powerful and reliable component that can be used in a wide range of applications. It is capable of handling high power dissipation, fast switching, and low power consumption. This component is ideal for use in general-purpose switching, SoC/ASICs, servers, power management, power conversion, and data center applications. This component can also be used in telecom systems and industrial automation applications.

The specific data is subject to PDF, and the above content is for reference

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