PSMN1R5-30BLEJ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1101-2-ND |
Manufacturer Part#: |
PSMN1R5-30BLEJ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 120A D2PAK |
More Detail: | N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2... |
DataSheet: | PSMN1R5-30BLEJ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 401W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14934pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 228nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PSMN1R5-30BLEJ is a N-channel power MOSFET with advanced battery-driven low side switch applications. It offers an extended drain-source ESD protection up to 4 kV, low RDSON, and low gate charge. This makes it ideal for applications such as mobile phones, portable communication devices, consumer electronics and audio amplifiers. The device is available in a small surface-mount SOT-223 package.
The PSMN1R5-30BLEJ is a single-mode FET that uses a gate voltage control to modulate a channel formed between the source and the drain. In order to operate, the channel must be created and maintained by the gate voltage. When the gate voltage is applied, it induces a channel between the source and the drain, allowing current to flow freely. The current flow can then be regulated by varying the gate voltage, and the MOSFET can be turned on and off as required.
The PSMN1R5-30BLEJ is a low side switch application and is mainly used for load switching, dealing with high power loads, or providing protection in the power supply. It has various protection features like thermal protection, reverse blocking, ESD protection and over temperature shutdown. It is designed to be used in battery-driven applications, allowing up to 4 kV of drain-to-source ESD protection.
The PSMN1R5-30BLEJ also features a low gate charge and a low drain-to-source on-resistance. This makes it a great choice for applications with high power requirements, such as audio amplifiers. The low gate charge means that gate drive circuitry is not required, making it the perfect choice for applications with limited power supply options. The low on-resistance also means that less wattage will be wasted in the form of heat, making it a great choice for power efficiency.
In conclusion, the PSMN1R5-30BLEJ is a great choice for a wide range of high power switching applications. Its low gate charge, extended drain-source ESD protection, and low RDSON make it an ideal choice for mobile phones, portable communication devices, consumer electronics and audio amplifiers. The device is available in a small surface-mount SOT-223 package, making it easy to use.
The specific data is subject to PDF, and the above content is for reference
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