PSMN2R0-30BL,118

In electronics, a PSMN2R0-30BL,118 is one type of single MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is designed to handle high power and offer a large current range as well as a high switching frequency.

Description

The PSMN2R0-30BL,118 is a 30V N-channel HEXFET power MOSFET with an on-resistance of 0.096 ohms. It is rated at 80A current and has a typical input capacitance of 3870 pF. It is also able to function without a heat sink, which allows for easier board layout and lower system cost.

Application Fields

The PSMN2R0-30BL,118 is ideal for applications in high-speed switching and power conversion applications, including switched-mode power supplies, motor drives, and battery chargers. It is also suitable for power management applications such as low-power standby circuit, hot swap and reverse-current protection.

Working Principle

A MOSFET operates using the principle of depletion-mode conduction. Ions within the depletion layer create an electrical field that prevents the electrons from crossing the channel. When a gate voltage is applied, the ions within the gate repel the ions within the channel and the electrons are allowed to cross, allowing current flow. As the gate voltage is increased, the flow of electrons across the channel is increased, thus providing control of the current flow.

Advantages

The PSMN2R0-30BL,118 provides a number of advantages, such as a high switching frequency, low on-resistance, low input capacitance, and the ability to operate without a heat sink. It is also designed to handle high voltage and current loads with minimal power dissipation. Additionally, the device is designed to be compatible with a wide range of logic-level inputs.

Disadvantages

There are a few drawbacks of using the PSMN2R0-30BL,118. It has a relatively low gate threshold voltage and can only handle relatively low temperatures. It is also prone to failure due to latch-up and can be sensitive to temperature changes.