PSMN2R8-80BS,118

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A P-channel metal-oxide-semiconductor field-effect transistor, or often abbreviated as an PMOSFET, is a type of insulated-gate field-effect transistor that utilizes a conductive gate to control the flow of current between the source and drain. It is often used to amplify or switch signals, making them the preferred choice for design of audio amplifiers and video amplifiers, among many other applications. The PMOSFET is often characterized by its low voltage-gate threshold,which makes them useful in designs in which low voltage is necessary. The PMOSFET also has the benefit of lower gate capacitance and high drain current, making them desirable for a wider range of applications.

The PMOSFET is a three-terminal device consisting of one gate, one source, and one drain. It\'s constructed with an insulated-gate and a semiconductor body, which is typically composed of n-type silicon and frequently referred to as an nMOSFET. The advantage of the PMOSFET is that it allows for fast switching and has a wide range of applications due to its low on-state resistance.

The PMOSFET is especially suitable for applications where the drain current flows in the reverse direction, such as power MOSFETs and complementary power MOSFETs (CMOS). On the other hand, the PMOSFET is often used in switches, low frequency analog amplifiers, and in some specialized low frequency digital circuits. Common examples of the PMOSFETs use include voltage level shifting, audio amplifiers, and switching power supply design.

The specific part being discussed here is the PSMN2R8-80BS,118 transistor. This particular device is a P-channel 120V 30A 30W metal oxide semiconductor field-effect transistor (MOSFET) used to control low frequency circuits. Its current is controlled by a voltage on the gate terminal. It has a maximum drain source on-state resistance of 8 mOhms, a maximum current rating of 30A, and a maximum power rating 30W. It also has a capacitance of 3.2 pF, an inductance of 2.2 nH, and a total gate charge of 120 nC. The PSMN2R8-80BS,118 is commonly found in applications including high voltage DC power switch, automotive power switches, battery management systems, and motor drive controllers.

The working principle of the PSMN2R8-80BS,118 involves controlling the current between the source and drain by applying a voltage to the gate terminal. When a voltage is applied to the gate terminal, it creates an electric field in the semiconductor body, causing a depletion or accumulation layer in the body. This lowers the threshold voltage and reduces resistance between the source and drain. It is this reduced resistance that allows current to flow between the source and drain.

In conclusion, the PSMN2R8-80BS,118 is a popular PMOSFET device which is used in a variety of applications, such as voltage level shifting, audio amplifiers, and switching power supply design. It is characterized by low voltage-gate threshold, low on-state resistance, low gate capacitance, and high drain current. It works by controlling the current between the source and drain by applying a voltage to the gate terminal, which causes a depletion or accumulation layer in the body and reduces resistance between the source and drain.

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