PSMN3R2-30YLC,115 Allicdata Electronics
Allicdata Part #:

1727-5302-2-ND

Manufacturer Part#:

PSMN3R2-30YLC,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 100A LFPAK
More Detail: N-Channel 30V 100A (Tc) 92W (Tc) Surface Mount LFP...
DataSheet: PSMN3R2-30YLC,115 datasheetPSMN3R2-30YLC,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 92W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2081pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors are components capable of controlling the flow of electricity in an electronic circuit by varying the output current or voltage. PSMN3R2-30YLC,115 is one of the most commonly used transistors, which is categorized as FETs, MOSFETs and Single.

A FET or field-effect transistor is an active device made from semiconductors. FETs consist of two or more terminals. Unlike regular transistors, FETs do not use a base or collector, but can control current through the channel between the source and drain terminals. The source and drain terminals are connected to the gate region where the current passes from one side to the other. PSMN3R2-30YLC,115, therefore, features one gate terminal to control its threshold limit.

MOSFETs, or Metal Oxide Silicon Field Effect Transistors, are similar to FETs as they are also made of semiconductors. The main difference between FETs and MOSFETs is that MOSFETs are insulated by a very thin layer of insulating material, called the gate oxide which isolates the gate terminal from the source and drain terminals. PSMN3R2-30YLC,115 is a MOSFET compared to other types of FETs.

The single type is used mainly for specific applications, as opposed to transistors which are used for multiple applications. The single type of PSMN3R2-30YLC,115 is suitable for power applications as it has an extreme capacity. It is capable of withstanding high surge current, making it ideal for boosting current in applications involving high power, like electrical motors and pumps. Furthermore, it features an increased thermal resistance due to its construction, so it can withstand more temperature and hence is regarded as a more reliable transistor as compared to other types.

Another great feature of PSMN3R2-30YLC,115 is its fast switching capabilities for its size. This makes it useful for digital applications such as electronic switches, multiplexer circuits or memory circuits. Moreover, it is a low-noise transistor, ideal for applications involving communication.

In conclusion, PSMN3R2-30YLC,115 is an ideal transistor for a range of applications due to its fast switching properties and increased thermal resistance. These two features make it suitable for power applications, digital applications and communication applications, among others.

The specific data is subject to PDF, and the above content is for reference

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